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TMS464409

更新时间： 2024-09-24 12:21:59
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德州仪器 - TI 存储
页数 文件大小 规格书
33页 520K
描述
16 777 216 BY 4-BIT EXTENDED DATA OUT DYNAMIC RANDOM-ACCESS MEMORIES

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TMS464409 数据手册

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TMS464409, TMS464409P, TMS465409, TMS465409P  
16 777 216 BY 4-BIT EXTENDED DATA OUT  
DYNAMIC RANDOM-ACCESS MEMORIES  
SMKS895A – MAY 1997 – REVISED OCTOBER 1997  
DGC PACKAGE  
(TOP VIEW)  
Organization . . . 16777216 by 4 Bits  
Single 3.3-V Power Supply  
(±0.3-V Tolerance)  
V
V
SS  
1
32  
31  
30  
29  
28  
27  
CC  
Performance Ranges:  
DQ1  
DQ2  
NC  
NC  
NC  
NC  
W
DQ4  
DQ3  
NC  
2
ACCESS ACCESS ACCESS EDO  
3
TIME  
TIME  
TIME  
CYCLE  
4
t
t
t
t
HPC  
RAC  
CAC  
AA  
NC  
5
(MAX)  
’46x409/P-40 40 ns  
’46x409/P-50 50 ns  
’46x409/P-60 60 ns  
(MAX)  
11 ns  
13 ns  
15 ns  
(MAX)  
20 ns  
25 ns  
30 ns  
(MIN)  
16 ns  
20 ns  
25 ns  
NC  
6
7
26 CAS  
8
25  
24  
23  
22  
21  
20  
19  
18  
17  
OE  
A12  
A11  
A10  
A9  
†
9
RAS  
A0  
Extended-Data-Out (EDO) Operation  
CAS-Before-RAS (CBR) Refresh  
10  
11  
12  
13  
14  
15  
16  
A1  
Long Refresh Period (See Available  
Options Table)  
A2  
A3  
A8  
Low-Power, Self-Refresh Version  
(TMS46x409P)  
A4  
A7  
A5  
A6  
V
V
3-State Unlatched Output  
CC  
SS  
All Inputs/Outputs and Clocks Are  
Low-Voltage TTL (LVTTL) Compatible  
†
A12 is NC for TMS465409 and TMS465409P.  
High-Reliability Plastic 32-Lead  
400-Mil-Wide Thin Small-Outline (TSOP)  
Package (DGC Suffix)  
PIN NOMENCLATURE  
A0–A12  
CAS  
Address Inputs  
Column-Address Strobe  
Data In/Data Out  
No Internal Connection  
Output Enable  
Operating Free-Air Temperature Range  
DQ1–DQ4  
NC  
0°C to 70°C  
OE  
RAS  
W
Row-Address Strobe  
Write Enable  
AVAILABLE OPTIONS  
V
3.3-V Supply  
Ground  
SELF-REFRESH  
BATTERY  
RAS-ONLY  
REFRESH  
CYCLES  
CBR  
REFRESH  
CYCLES  
CC  
V
SS  
DEVICE  
BACKUP  
TMS464409  
TMS464409P  
TMS465409  
TMS465409P  
—
YES  
—
8192 in 64 ms  
4096 in 64 ms  
8192 in 128 ms 4096 in 128 ms  
4096 in 64 ms 4096 in 64 ms  
4096 in 128 ms 4096 in 128 ms  
YES  
description  
The TMS464409 and TMS465409 series are low-voltage, 67108864-bit dynamic random-access memories  
(DRAMs), organized as 16777216 words of 4 bits each. The TMS464409P and TMS465409P series are  
high-speed, low-voltage, low-power, self-refresh, 67108864-bit DRAMs, organized as 16777216 words of  
4 bits each. Both sets of devices employ state-of-the-art technology for high performance, reliability, and low  
power.  
ThesedevicesfeaturemaximumRASaccesstimesof40, 50, and60ns. Allinputsandoutputs, includingclocks,  
are compatible with LVTTL. All addresses and data-in lines are latched on chip to simplify system design. Data  
out is unlatched to allow greater system flexibility.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCT PREVIEW information concerns products in the formative or  
design phase of development. Characteristic data and other  
specifications are design goals. Texas Instruments reserves the right to  
change or discontinue these products without notice.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...33

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与TMS464409相关器件

型号 品牌 获取价格 描述 数据表
TMS464409-40DGC TI

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 		16MX4 EDO DRAM, 40ns, PDSO32, 0.400 INCH, PLASTIC, TSOP-32
TMS464409P-40DGC TI

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 		16MX4 EDO DRAM, 40ns, PDSO32, 0.400 INCH, PLASTIC, TSOP-32
TMS464409P-50DGC TI

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 		16MX4 EDO DRAM, 50ns, PDSO32, 0.400 INCH, PLASTIC, TSOP-32
TMS464409P-60DGC TI

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 		16MX4 EDO DRAM, 60ns, PDSO32, 0.400 INCH, PLASTIC, TSOP-32
TMS46460P-70DJ TI

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 		1MX4 FAST PAGE DRAM, 70ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
TMS464800-60DGC TI

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 		8MX8 FAST PAGE DRAM, 60ns, PDSO32, PLASTIC, TSOP-32
TMS464800-60DZ TI

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 		8MX8 FAST PAGE DRAM, 60ns, PDSO32
TMS464800-70DGC TI

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 		8MX8 FAST PAGE DRAM, 70ns, PDSO32, PLASTIC, TSOP-32
TMS464800-80DZ TI

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 		8MX8 FAST PAGE DRAM, 80ns, PDSO32
TMS464800P-70DGC TI

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 		8MX8 FAST PAGE DRAM, 70ns, PDSO32, PLASTIC, TSOP-32

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