TMS416160, TMS416160P, TMS418160, TMS418160P
TMS426160, TMS426160P, TMS428160, TMS428160P
1048576-WORD BY 16-BIT HIGH-SPEED DRAMS
SMKS160C – MAY 1995–REVISED NOVEMBER 1995
DGE PACKAGE
(TOP VIEW)
DZ PACKAGE
(TOP VIEW)
Organization . . . 1048576 × 16
Single Power Supply (5 V or 3.3 V)
Performance Ranges:
1
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
V
V
V
V
SS
1
50
49
48
47
46
45
44
43
42
41
40
CC
SS
CC
ACCESS ACCESS ACCESS READ OR
2
DQ0
DQ1
DQ2
DQ3
DQ15
DQ14
DQ13
DQ12
DQ0
DQ1
DQ2
DQ3
DQ15
DQ14
DQ13
DQ12
2
TIME
TIME
TIME
WRITE
CYCLE
MIN
110 ns
130 ns
150 ns
t
t
t
3
3
RAC
CAC
AA
MAX
’4xx160/P-60 60 ns
’4xx160/P-70 70 ns
’4xx160/P-80 80 ns
MAX
15 ns
18 ns
20 ns
MAX
30 ns
35 ns
40 ns
4
4
5
5
6
V
V
V
V
6
CC
SS
CC
SS
7
DQ4
DQ5
DQ6
DQ7
NC
DQ11
DQ10
DQ9
DQ8
NC
DQ4
DQ5
DQ6
DQ7
NC
DQ11
DQ10
DQ9
DQ8
NC
LCAS
UCAS
OE
7
Enhanced Page-Mode Operation With
CAS-Before-RAS (CBR) Refresh
Long Refresh Period and Self-Refresh
Option (TMS4xx160P)
3-State Unlatched Output
Low Power Dissipation
High-Reliability Plastic 42-Lead (DZ Suffix)
400-Mil-Wide Surface-Mount (SOJ) Package
and 44/50-Lead (DGE Suffix) Surface-Mount
Thin Small-Outline Package (TSOP)
8
8
9
9
10
11
12
13
14
15
16
17
18
19
20
21
10
11
NC
W
RAS
†
15
16
17
18
19
20
21
22
23
24
25
36
35
34
33
32
31
30
29
28
27
26
NC
NC
W
NC
LCAS
UCAS
OE
A9
A11
A10
A9
A8
A7
A6
A5
A4
†
A0
A1
A2
A3
Operating Free-Air Temperature Range
RAS
0°C to 70°C
†
A11
A10
Fabricated Using the Texas Instruments
Enhanced Performance Implanted CMOS
(EPIC ) Technology
†
A8
A7
A0
A1
A2
A3
V
V
SS
CC
A6
A5
A4
V
AVAILABLE OPTIONS
SELF
POWER
SUPPLY
REFRESH
CYCLES
REFRESH,
BATTERY
BACKUP
V
DEVICE
CC
SS
†
A10 and A11 are NC for TMS4x8160 and TMS4x8160P.
TMS416160
TMS416160P
TMS418160
TMS418160P
TMS426160
TMS426160P
TMS428160
TMS428160P
5 V
5 V
5 V
—
Yes
—
Yes
—
Yes
—
Yes
4096 in 64 ms
4096 in 128 ms
1024 in 16 ms
1024 in 128 ms
4096 in 64 ms
4096 in 128 ms
1024 in 16 ms
1024 in 128 ms
PIN NOMENCLATURE
5 V
A0–A11
DQ0–DQ15
LCAS
UCAS
NC
Address Inputs
3.3 V
3.3 V
3.3 V
3.3 V
Data In/Data Out
Lower Column-Address Strobe
Upper Column-Address Strobe
No Internal Connection
Output Enable
OE
RAS
description
Row-Address Strobe
‡
V
V
W
5-V or 3.3-V Supply
Ground
CC
SS
The TMS4xx160 series is a set of high-speed,
16777216-bit dynamic random-access memo-
ries (DRAMs) organized as 1048576 words of 16
bits each. The TMS4xx160P series is a similar
set of high-speed, low-power, self-refresh,
Write Enable
‡
See Available Options Table.
16777216-bit DRAMs organized as 1048576 words of 16 bits each. Both sets employ state-of-the-art
enhanced performance implanted CMOS (EPIC ) technology for high performance, reliability, and low power
at low cost.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
EPIC is a trademark of Texas Instruments Incorporated.
Copyright 1995, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
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