5秒后页面跳转
TMS416160P PDF预览

TMS416160P

更新时间: 2024-11-15 03:59:03
品牌 Logo 应用领域
德州仪器 - TI 动态存储器
页数 文件大小 规格书
28页 413K
描述
1048576-WORD BY 16-BIT HIGH-SPEED DRAMS

TMS416160P 数据手册

 浏览型号TMS416160P的Datasheet PDF文件第2页浏览型号TMS416160P的Datasheet PDF文件第3页浏览型号TMS416160P的Datasheet PDF文件第4页浏览型号TMS416160P的Datasheet PDF文件第5页浏览型号TMS416160P的Datasheet PDF文件第6页浏览型号TMS416160P的Datasheet PDF文件第7页 
TMS416160, TMS416160P, TMS418160, TMS418160P  
TMS426160, TMS426160P, TMS428160, TMS428160P  
1048576-WORD BY 16-BIT HIGH-SPEED DRAMS  
SMKS160C – MAY 1995REVISED NOVEMBER 1995  
DGE PACKAGE  
(TOP VIEW)  
DZ PACKAGE  
(TOP VIEW)  
Organization . . . 1048576 × 16  
Single Power Supply (5 V or 3.3 V)  
Performance Ranges:  
1
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
V
V
V
V
SS  
1
50  
49  
48  
47  
46  
45  
44  
43  
42  
41  
40  
CC  
SS  
CC  
ACCESS ACCESS ACCESS READ OR  
2
DQ0  
DQ1  
DQ2  
DQ3  
DQ15  
DQ14  
DQ13  
DQ12  
DQ0  
DQ1  
DQ2  
DQ3  
DQ15  
DQ14  
DQ13  
DQ12  
2
TIME  
TIME  
TIME  
WRITE  
CYCLE  
MIN  
110 ns  
130 ns  
150 ns  
t
t
t
3
3
RAC  
CAC  
AA  
MAX  
’4xx160/P-60 60 ns  
’4xx160/P-70 70 ns  
’4xx160/P-80 80 ns  
MAX  
15 ns  
18 ns  
20 ns  
MAX  
30 ns  
35 ns  
40 ns  
4
4
5
5
6
V
V
V
V
6
CC  
SS  
CC  
SS  
7
DQ4  
DQ5  
DQ6  
DQ7  
NC  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
DQ4  
DQ5  
DQ6  
DQ7  
NC  
DQ11  
DQ10  
DQ9  
DQ8  
NC  
LCAS  
UCAS  
OE  
7
Enhanced Page-Mode Operation With  
CAS-Before-RAS (CBR) Refresh  
Long Refresh Period and Self-Refresh  
Option (TMS4xx160P)  
3-State Unlatched Output  
Low Power Dissipation  
High-Reliability Plastic 42-Lead (DZ Suffix)  
400-Mil-Wide Surface-Mount (SOJ) Package  
and 44/50-Lead (DGE Suffix) Surface-Mount  
Thin Small-Outline Package (TSOP)  
8
8
9
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
10  
11  
NC  
W
RAS  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
36  
35  
34  
33  
32  
31  
30  
29  
28  
27  
26  
NC  
NC  
W
NC  
LCAS  
UCAS  
OE  
A9  
A11  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A0  
A1  
A2  
A3  
Operating Free-Air Temperature Range  
RAS  
0°C to 70°C  
A11  
A10  
Fabricated Using the Texas Instruments  
Enhanced Performance Implanted CMOS  
(EPIC ) Technology  
A8  
A7  
A0  
A1  
A2  
A3  
V
V
SS  
CC  
A6  
A5  
A4  
V
AVAILABLE OPTIONS  
SELF  
POWER  
SUPPLY  
REFRESH  
CYCLES  
REFRESH,  
BATTERY  
BACKUP  
V
DEVICE  
CC  
SS  
A10 and A11 are NC for TMS4x8160 and TMS4x8160P.  
TMS416160  
TMS416160P  
TMS418160  
TMS418160P  
TMS426160  
TMS426160P  
TMS428160  
TMS428160P  
5 V  
5 V  
5 V  
Yes  
Yes  
Yes  
Yes  
4096 in 64 ms  
4096 in 128 ms  
1024 in 16 ms  
1024 in 128 ms  
4096 in 64 ms  
4096 in 128 ms  
1024 in 16 ms  
1024 in 128 ms  
PIN NOMENCLATURE  
5 V  
A0A11  
DQ0DQ15  
LCAS  
UCAS  
NC  
Address Inputs  
3.3 V  
3.3 V  
3.3 V  
3.3 V  
Data In/Data Out  
Lower Column-Address Strobe  
Upper Column-Address Strobe  
No Internal Connection  
Output Enable  
OE  
RAS  
description  
Row-Address Strobe  
V
V
W
5-V or 3.3-V Supply  
Ground  
CC  
SS  
The TMS4xx160 series is a set of high-speed,  
16777216-bit dynamic random-access memo-  
ries (DRAMs) organized as 1048576 words of 16  
bits each. The TMS4xx160P series is a similar  
set of high-speed, low-power, self-refresh,  
Write Enable  
See Available Options Table.  
16777216-bit DRAMs organized as 1048576 words of 16 bits each. Both sets employ state-of-the-art  
enhanced performance implanted CMOS (EPIC ) technology for high performance, reliability, and low power  
at low cost.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
EPIC is a trademark of Texas Instruments Incorporated.  
Copyright 1995, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251–1443  

与TMS416160P相关器件

型号 品牌 获取价格 描述 数据表
TMS416160P-60DC TI

获取价格

1MX16 FAST PAGE DRAM, 60ns, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50/44
TMS416160P-60DGE TI

获取价格

1MX16 FAST PAGE DRAM, 60ns, PDSO44, PLASTIC, TSOP-50/44
TMS416160P-60DZ TI

获取价格

1MX16 FAST PAGE DRAM, 60ns, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
TMS416160P-60RE TI

获取价格

1MX16 FAST PAGE DRAM, 60ns, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
TMS416160P-70DC TI

获取价格

1MX16 FAST PAGE DRAM, 70ns, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50/44
TMS416160P-70DGE TI

获取价格

1MX16 FAST PAGE DRAM, 70ns, PDSO44, PLASTIC, TSOP-50/44
TMS416160P-70RE TI

获取价格

1MX16 FAST PAGE DRAM, 70ns, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
TMS416160P-80DC TI

获取价格

1MX16 FAST PAGE DRAM, 80ns, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50/44
TMS416160P-80DZ TI

获取价格

1MX16 FAST PAGE DRAM, 80ns, PDSO42, 0.400 INCH, PLASTIC, SOJ-42
TMS416169 TI

获取价格

1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS