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TMS416100P PDF预览

TMS416100P

更新时间： 2024-11-16 02:58:39
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
25页 368K
描述
16777216-BIT DYNAMIC RANDOM-ACCESS MEMORIES

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TMS416100P 数据手册

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TMS416100, TMS416100P  
16777216-BIT  
DYNAMIC RANDOM-ACCESS MEMORIES  
SMKS611 – FEBRUARY 1994  
DJ PACKAGE  
(TOP VIEW)  
DGA PACKAGE  
(TOP VIEW)  
This data sheet is applicable to all  
TMS416100/Ps symbolized with Revision “B”  
and subsequent revisions as described on  
page 24.  
1
2
3
4
5
6
26  
25  
24  
23  
22  
21  
1
2
3
4
5
6
26  
25  
24  
23  
22  
21  
V
V
SS  
Q
V
V
SS  
Q
CC  
D
CC  
D
• Organization . . . 16 777 216 × 1  
• Single 5-V Power Supply (±10% Tolerance)  
NC  
W
NC  
CAS  
NC  
A9  
NC  
W
NC  
CAS  
NC  
A9  
RAS  
A11  
RAS  
A11  
• Performance Ranges:  
ACCESS ACCESS ACCESS READ  
TIME  
TIME  
TIME OR WRITE  
t
t
t
CYCLE  
(MIN)  
RAC  
CAC  
AA  
8
19  
18  
17  
16  
15  
14  
A8  
A7  
A6  
A5  
A4  
8
19  
18  
17  
16  
15  
14  
A10  
A0  
A1  
A2  
A3  
A8  
A7  
A6  
A5  
A4  
A10  
A0  
A1  
A2  
A3  
(MAX)  
60 ns  
70 ns  
80 ns  
(MAX)  
15 ns  
18 ns  
20 ns  
(MAX)  
30 ns  
35 ns  
40 ns  
9
9
’416100-60  
’416100-70  
’416100-80  
110 ns  
10  
11  
12  
13  
10  
11  
12  
13  
130 ns  
150 ns  
• Enhanced Page Mode Operation for Faster  
V
V
V
V
CC  
SS  
Memory Access  
CC  
SS  
• CAS-Before-RAS Refresh  
• Long Refresh Period  
– 4096 Cycle Refresh in 64 ms  
(TMS416100)  
PIN NOMENCLATURE  
A0–A11  
CAS  
D
Address Inputs  
Column-Address Strobe  
Data In  
– 256 ms for Extended Refresh Version  
(TMS416100P)  
Q
NC  
RAS  
Data Out  
• 3-State Unlatched Output  
No Internal Connection  
Row-Address Strobe  
5-V Supply  
Ground  
Write Enable  
• Low Power Dissipation (TMS416100P Only)  
– 500-µA CMOS Standby Current  
– 500-µA Self-Refresh Current  
– 500-µA Extended Refresh Battery Backup  
Current  
V
V
W
CC  
SS  
• All Inputs, Outputs and Clocks Are TTL  
Compatible  
• Operating Free-Air Temperature Range:  
0°C to 70°C  
description  
The TMS416100/P series are high-speed, 16777216-bit dynamic random-access memories, organized as  
16777216 words of one bit each. The TMS416100P series feature self refresh and extended refresh. They  
employ state-of-the-art EPIC (Enhanced Performance Implanted CMOS) technology for high performance,  
reliability, and low power at a low cost.  
These devices feature maximum RAS access times of 60 ns, 70 ns, and 80 ns. All inputs, outputs, and clocks  
are compatible with Series 74 TTL. All addresses and data-in lines are latched on chip to simplify system design.  
Data out is unlatched to allow greater system flexibility.  
The TMS416100/P are offered in 300-mil 24/26-lead plastic surface-mount SOJ packages (DJ suffix) and  
24/26-lead plastic small-outline packages (DGA suffix). All packages are characterized for operation from 0°C  
to 70°C.  
EPIC is a trademark of Texas Instruments Incorporated.  
Copyright 1994, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...25

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与TMS416100P相关器件

型号 品牌 获取价格 描述 数据表
TMS416100P-60DJ TI

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 		16MX1 FAST PAGE DRAM, 60ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
TMS416100P-70DJ TI

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 		16MX1 FAST PAGE DRAM, 70ns, PDSO24, 0.300 INCH, PLASTIC, SOJ-26/24
TMS416100P-80DGB TI

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 		16MX1 FAST PAGE DRAM, 80ns, PDSO24, PLASTIC, REVERSE, TSOP-26/24
TMS4161-15FML TI

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 		64KX1 VIDEO DRAM, 150ns, PQCC18
TMS4161-15NL TI

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 		64KX1 VIDEO DRAM, 150ns, PDIP20
TMS4161-20FML TI

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 		64KX1 VIDEO DRAM, 200ns, PQCC18
TMS4161-20NL TI

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 		64KX1 VIDEO DRAM, 200ns, PDIP20
TMS416160 TI

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 		1048576-WORD BY 16-BIT HIGH-SPEED DRAMS
TMS416160-60DC TI

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 		1MX16 FAST PAGE DRAM, 60ns, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP-50/44
TMS416160-60DZ TI

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 		1MX16 FAST PAGE DRAM, 60ns, PDSO42, 0.400 INCH, PLASTIC, SOJ-42

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