TMS3473B
PARALLEL DRIVER
SOCS022B – NOVEMBER 1990
DW PACKAGE
(TOP VIEW)
•
•
•
TTL-Compatible Inputs
CCD-Compatible Outputs
Variable-Output Slew Rates With External
Resistor Control
IALVL
I/N
IAIN
ABIN
MIDSEL
SAIN
PD
V
SS
IASR
ABSR
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
•
•
•
•
Full-Frame Operation
Frame-Transfer Operation
Solid-State Reliability
Adjustable Clock Levels
V
CC
ABLVL
IAOUT
ABOUT
SAOUT
GND
description
V
V
ABG+
CC
The TMS3473B is a monolithic CMOS integrated
V
V
SS
ABG–
circuit designed to drive the parallel image-area
gate (IAG), parallel storage-area gate (SAG), and
antiblooming gate (ABG) inputs of the Texas Instruments (TI ) virtual-phase CCD image sensors. The
TMS3473B interfaces the CCD image sensor to a user-defined timing generator; it receives TTL-input signals
from the timing generator and outputs level-shifted and slew-rate-adjusted signals to the image sensor.
The TMS3473B allows operation of the CCD image sensor in either the interlace or noninterlace mode. When
the TMS3473B I/N input is connected to V , the interlace mode is selected (see Figure 1); when I/N is
SS
connected to V , the noninterlace mode is selected (see Figure 2).
CC
ABOUT follows ABIN and switches between V
and V
. IAOUT and SAOUT follow IAIN and SAIN,
ABG+
ABG–
respectively, and switch between V
and V . Additionally, ABOUT and IAOUT can each be made to output
CC
SS
midlevel voltages. DC inputs to ABLVL and IALVL determine the midlevel voltages that can be output on ABOUT
and IAOUT, respectively. A high-logic level on MIDSEL causes ABOUT to output its midlevel voltage; a low-logic
level on MIDSEL causes IAOUT to output its midlevel voltage if the interlace mode is selected.
Slew-rate adjustment of IAOUT and ABOUT is accomplished by connecting IASR to V
and ABSR to V
ABG+
CC
through external resistors. The larger the resistor values, the longer the rise and fall times are.
A low-logic level on PD causes the TMS3473B to power down and all outputs to assume their low levels (IAOUT
and SAOUT to V , ABOUT to V ).
SS
ABG–
The TMS3473B is supplied in a 20-pin surface-mount package (DW) and is characterized for operation from
–20°C to 45°C.
This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These
circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C,
Method3015;however, precautionsshouldbetakentoavoidapplicationofanyvoltagehigherthanmaximum-ratedvoltagestothese
high-impedance circuits. During storage or handling, the device leads should be shorted together or the device should be placed in
conductive foam. In a circuit, unused inputs should always be connected to an appropriated logic voltage level, preferably either V
Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive
(ESDS) Devices and Assemblies available from Texas Instruments.
or ground.
CC
TI is a trademark of Texas Instruments Incorporated.
Copyright 1990, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
5秒后页面跳转
摩尔斯微电子在美国约书亚树国家公园测试 Wi-Fi HaLow
贸泽上架Tallysman TW5386智能GNSS天线
SL74HC10N：高性能三输入与非门解析
AIC1781A 电池充电控制器深度解析
微信公众号
抖音公众号
浙公网安备 33010502006866号 浙ICP备10014259号-119
营业执照ICP证
数据手册
如果您发现信息不准确，
