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TMS29F040-90C5FML PDF预览

TMS29F040-90C5FML

更新时间： 2024-09-19 14:45:15
品牌 Logo 应用领域
德州仪器 - TI 可编程只读存储器内存集成电路
页数 文件大小 规格书
37页 482K
描述
512KX8 FLASH 5V PROM, 90ns, PQCC32, PLASTIC, LCC-32

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TMS29F040-90C5FML 技术参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Obsolete零件包装代码：QFJ
包装说明：QCCJ, LDCC32,.5X.6针数：32
Reach Compliance Code：not_compliantECCN代码：EAR99
HTS代码：8542.32.00.51Factory Lead Time：1 week
风险等级：5.43最长访问时间：90 ns
其他特性：100000 PROGRAM/ERASE CYCLES命令用户界面：YES
数据轮询：YES耐久性：100000 Write/Erase Cycles
JESD-30 代码：R-PQCC-J32长度：13.97 mm
内存密度：4194304 bit内存集成电路类型：FLASH
内存宽度：8功能数量：1
部门数/规模：8端子数量：32
字数：524288 words字数代码：512000
工作模式：ASYNCHRONOUS最高工作温度：70 °C
最低工作温度：组织：512KX8
输出特性：3-STATE封装主体材料：PLASTIC/EPOXY
封装代码：QCCJ封装等效代码：LDCC32,.5X.6
封装形状：RECTANGULAR封装形式：CHIP CARRIER
并行/串行：PARALLEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：5 V编程电压：5 V
认证状态：Not Qualified座面最大高度：3.56 mm
部门规模：64K最大待机电流：0.0001 A
子类别：Flash Memories最大压摆率：0.06 mA
最大供电电压 (Vsup)：5.5 V最小供电电压 (Vsup)：4.5 V
标称供电电压 (Vsup)：5 V表面贴装：YES
技术：CMOS温度等级：COMMERCIAL
端子形式：J BEND端子节距：1.27 mm
端子位置：QUAD处于峰值回流温度下的最长时间：NOT SPECIFIED
切换位：YES类型：NOR TYPE
宽度：11.43 mmBase Number Matches：1

TMS29F040-90C5FML 数据手册

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TMS29F040  
524288 BY 8-BIT  
FLASH MEMORY  
SMJS820C – APRIL 1996 – REVISED JUNE 1998  
FM PACKAGE  
(TOP VIEW)  
D
Single Power Supply: 5 V ± 10%  
– 3.3 V ± 0.3 V – See TMS29LF040/  
TMS29VF040 Data Sheet (Literature  
Number SMJS825)  
– 2.7 V to 3.6 V – See TMS29LF040/  
TMS29VF040 Data Sheet  
4
3 2 1 32 31 30  
5
29  
28  
27  
26  
25  
24  
23  
22  
21  
A7  
A6  
A14  
A13  
A8  
D
D
Organization . . . 524288 By 8 Bits  
6
7
A5  
Eight Equal Sectors of 64K Bytes  
– Any Combination of Sectors Can Be  
Erased  
– Any Combination of Sectors Can Be  
Marked as Read-Only  
8
A4  
A9  
9
A3  
A11  
G
10  
11  
12  
13  
A2  
A1  
A10  
E
A0  
D
D
Compatible With JEDEC Electrically  
Erasable Programmable Read-Only  
Memory (EEPROM) Command Set  
DQ0  
DQ7  
14 15 16 17 18 19 20  
Fully Automated On-Chip Erase and  
Byte-Program Operations  
D
D
D
D
100000 Program/Erase Cycles  
PIN NOMENCLATURE  
Erase-Suspend/Erase-Resume Operation  
Compatible With JEDEC Byte-Wide Pinouts  
A[0:18]  
DQ[0:7]  
E
Address Inputs  
Inputs (programming)/Outputs  
Chip Enable  
Low-Current Consumption  
– Active Read . . . 20 mA Typical  
– Active Program/Erase . . . 30 mA Typical  
G
Output Enable  
V
V
5-V Power Supply  
Ground  
CC  
SS  
D
All Inputs/Outputs TTL-Compatible  
W
Write Enable  
description  
The TMS29F040 is a 524288 by 8-bit (4194304-bit), 5-V single-supply, programmable read-only memory that  
can be electrically erased and reprogrammed. This device is organized as eight independent 64K-byte sectors  
and is offered with access times between 60 ns and 120 ns.  
An on-chip state machine controls the program and erase operations. The embedded byte-program and  
sector/chip-erase functions are fully automatic. The command set is compatible with that of JEDEC 4M-bit  
EEPROMs. A suspend/resume feature allows access to unaltered memory sectors during a sector-erase  
operation. Data-protection of any sector combination is accomplished using a hardware sector-protection  
feature.  
Device operations are selected by writing JEDEC-standard commands into the command register using  
standard microprocessor write timings. The command register acts as input to an internal-state machine that  
interprets the commands, controls the erase and programming operations, and outputs the status of the device,  
the data stored in the device, and the device algorithm-selection code. On initial power-up operation, the device  
defaults to the read mode.  
The TMS29F040 is offered in a 32-pin plastic leaded chip carrier (FM suffix) using 1.27-mm (50-mil) lead pitch  
and a 32-pin thin small-outline package (DD suffix).  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...37

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TMS29F040-90C5FML 替代型号

型号 品牌 替代类型 描述 数据表
M29F040-90K1 STMICROELECTRONICS

类似代替

 512KX8 FLASH 5V PROM, 90ns, PQCC32, PLASTIC, LCC-32
SST28SF040A-90-4C-NH SST

功能相似

 4 Mbit (512K x8) SuperFlash EEPROM

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