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TMS28F200BZB70CDBJE PDF预览

TMS28F200BZB70CDBJE

更新时间： 2024-11-15 23:36:19
品牌 Logo 应用领域
其他 - ETC 闪存内存集成电路光电二极管可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
29页 473K
描述
x8/x16 Flash EEPROM

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TMS28F200BZB70CDBJE 数据手册

 浏览型号TMS28F200BZB70CDBJE的Datasheet PDF文件第2页浏览型号TMS28F200BZB70CDBJE的Datasheet PDF文件第3页浏览型号TMS28F200BZB70CDBJE的Datasheet PDF文件第4页浏览型号TMS28F200BZB70CDBJE的Datasheet PDF文件第5页浏览型号TMS28F200BZB70CDBJE的Datasheet PDF文件第6页浏览型号TMS28F200BZB70CDBJE的Datasheet PDF文件第7页 
TMS28F200BZT, TMS28F200BZB  
262144 BY 8-BIT/131072 BY 16-BIT  
BOOT-BLOCK FLASH MEMORIES  
SMJS200E – JUNE 1994 – REVISED JANUARY 1998  
DBJ PACKAGE  
(TOP VIEW)  
Organization . . . 262144 by 8 bits  
131072 by 16 bits  
Array-Blocking Architecture  
– Two 8K-Byte Parameter Blocks  
– One 96K-Byte Main Block  
– One 128K-Byte Main Block  
– One 16K-Byte Protected Boot Block  
– Top or Bottom Boot Locations  
V
1
2
3
4
5
6
7
8
9
44 RP  
PP  
NC  
NC  
A7  
A6  
A5  
A4  
A3  
A2  
43  
W
42  
A8  
41 A9  
40 A10  
39 A11  
38 A12  
All Inputs/Outputs TTL Compatible  
37  
A13  
36 A14  
Maximum Access/Minimum Cycle Time  
35  
34  
33  
32  
A1 10  
A0 11  
A15  
A16  
BYTE  
V
± 10%  
CC  
’28F200BZx70  
’28F200BZx80  
’28F200BZx90  
70 ns  
80 ns  
90 ns  
E
12  
13  
14  
V
V
SS  
G
SS  
31 DQ15/A  
30 DQ7  
29 DQ14  
28 DQ6  
–1  
(x = top (T) or bottom (B) boot-block  
configurations ordered)  
DQ0 15  
DQ8 16  
DQ1 17  
DQ9 18  
DQ2 19  
DQ10 20  
DQ3 21  
DQ11 22  
10000 Program/Erase-Cycles  
27  
DQ13  
Three Temperature Ranges  
26 DQ5  
25 DQ12  
24 DQ4  
– Commercial . . . 0°C to 70°C  
– Extended . . . – 40°C to 85°C  
– Automotive . . . – 40°C to 125°C  
23  
V
CC  
Low Power Dissipation (V  
= 5.5 V)  
CC  
– Active Write . . . 330 mW (Byte-Write)  
– Active Read . . . 330 mW (Byte-Read)  
– Active Write . . . 358 mW (Word-Write)  
– Active Read . . . 330 mW (Word-Read)  
– Block-Erase . . . 165 mW  
– Standby . . . 0.55 mW (CMOS-Input  
Levels)  
– Deep Power-Down Mode . . . 0.0066 mW  
PIN NOMENCLATURE  
A0–A16  
BYTE  
Address Inputs  
Byte Enable  
DQ0–DQ14 Data In/Out  
DQ15/A  
Data In/Out (word-wide mode),  
Low-Order Address (byte-wide mode)  
Chip Enable  
–1  
E
G
Output Enable  
NC  
RP  
No Internal Connection  
Reset/Deep Power-Down  
5-V Power Supply  
12-V Power Supply for Program/Erase  
Ground  
Fully Automated On-Chip Erase and  
Word/Byte-Program Operations  
V
CC  
V
PP  
V
SS  
Write-Protection for Boot Block  
Industry-Standard Command State Machine  
(CSM)  
W
Write Enable  
– Erase-Suspend/Resume  
– Algorithm-Selection Identifier  
description  
The TMS28F200BZx is a 262144 by 8-bit/131072 by 16-bit (2097152-bit), boot-block flash memory that can  
be electrically block-erased and reprogrammed. The TMS28F200BZx is organized in a blocked architecture  
consisting of one 16K-byte protected boot block, two 8K-byte parameter blocks, one 96K-byte main block, and  
one 128K-byte main block. The device can be ordered with either a top or bottom boot-block configuration.  
Operation as a 256K-by 8-bit or a 128K-by16-bit organization is user-definable.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 1998, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443  
1234567...29

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