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TMPG06-10AHE3_A/D PDF预览

TMPG06-10AHE3_A/D

更新时间： 2024-11-09 22:58:31
品牌 Logo 应用领域
威世 - VISHAY 电视
页数 文件大小 规格书
5页 78K
描述
TVS DIODE 8.55V 14.5V MPG06

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TMPG06-10AHE3_A/D 数据手册

 浏览型号TMPG06-10AHE3_A/D的Datasheet PDF文件第2页浏览型号TMPG06-10AHE3_A/D的Datasheet PDF文件第3页浏览型号TMPG06-10AHE3_A/D的Datasheet PDF文件第4页浏览型号TMPG06-10AHE3_A/D的Datasheet PDF文件第5页 
TMPG06-10A thru TMPG06-43A  
www.vishay.com  
Vishay General Semiconductor  
PAR® Transient Voltage Suppressors  
High Temperature Stability and High Reliability Conditions  
FEATURES  
• Available in uni-directional polarity only  
• 400 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty cycle):  
0.01 %  
• Excellent clamping capability  
• Very fast response time  
MPG06  
• Low incremental resistance  
• Solder dip 275 °C max. 10 s, per JESD 22-B106  
• AEC-Q101 qualified  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
APPLICATIONS  
Use in sensitive electronics protection against voltage  
PRIMARY CHARACTERISTICS  
transients induced by inductive load switching and lighting  
on ICs, MOSFET, signal lines of sensor units for consumer,  
computer, industrial, automotive, and telecommunication.  
VBR  
10 V to 43 V  
8.55 V to 36.8 V  
400 W  
VWM  
PPPM  
PD  
1.0 W  
MECHANICAL DATA  
IFSM  
40 A  
Case: MPG06, molded epoxy over passivated junction  
Molding compound meets UL 94 V-0 flammability rating  
TJ max.  
Polarity  
Package  
185 °C  
Uni-directional  
MPG06  
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified  
(“X” denotes revision code e.g. A, B, ...)  
Terminals: matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
HE3 suffix meets JESD 201 class 2 whisker test  
Polarity: color band denotes cathode end  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
PPPM  
IPPM  
VALUE  
UNIT  
W
Peak pulse power dissipation with a 10/1000 μs waveform (1) (fig. 1)  
Peak pulse current with a 10/1000 μs waveform (1)(2) (fig. 3)  
Power dissipation on infinite heatsink at TL = 75 °C (fig. 5)  
Peak forward surge current 8.3 ms single half sine-wave (2)  
Maximum instantaneous forward voltage at 25 A (2)  
Operating junction and storage temperature range  
400  
See next table  
1.0  
A
PD  
W
IFSM  
40  
A
VF  
3.5  
V
TJ, TSTG  
-65 to +185  
°C  
Notes  
(1)  
Non-repetitive current pulse, per fig. 3 and derated above TA = 25 °C per fig. 2  
Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(2)  
Revision: 04-Nov-16  
Document Number: 88404  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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