Datasheet > TMJD112D

TMJD112D

更新时间： 2024-04-09 19:01:56

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	403K
描述
100V,2A,General Purpose NPN Bipolar Transistor

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TMJD112D 数据手册

NPN Epitaxial Silicon Darlington Transisor

TMJD112D

Features



Epitaxial planar die construction

Ideal for low power amplification and switching

Halogen free

Qualified to AEC-Q101 standards for high reliability

Mechanic al Data



Case: TO-252

Molding compound: UL flammability classification rating 94V-0

Terminal s: Tin-plated; solderability per MIL-STD-202, Method 208

TO-252

Ordering Information

Part Number

Package

TO-252

Shipping Quantity

Marking Code

MJD112

TMJD112D

80 pcs / Tube or 2500 pcs / Tape & Reel

Maximum Ratings (@ T_A= 25°C unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Peak)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

100

Unit

I_CM

Base Current

I_B

0.05

Thermal Characteristics

Parameter

Power Dissipation (T_A= 25°C)

Thermal Resistance (Junction-to-Air)

Power Dissipation (T_C= 25°C)

Thermal Resistance (Junction-to-Case)

Junction Temperature

Symbol

P_D

Value

1.5

Unit

C/W

R_θJA

P_D

83.3

R_θJC

T_J

6.25

C/W

°C

-55 ~ +150

Storage Temperature Range

T_STG

°C

STM0598A: March 2023 [1.0]

www.gmesemi.com

12 3 4

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