Datasheet > TMD5872-2-321

TMD5872-2-321

更新时间： 2024-11-21 20:10:47

品牌	Logo	应用领域
东芝 - TOSHIBA		放大器射频微波功率放大器
页数	文件大小	规格书
2页	110K
描述
RF/Microwave Amplifier, RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER

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中文翻译

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技术参数
数据手册

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TMD5872-2-321 技术参数

生命周期：	Obsolete	包装说明：	FLNG,.53"H.SPACE
Reach Compliance Code：	unknown	风险等级：	5.84
功能数量：	1	最高工作温度：	80 °C
最低工作温度：	-30 °C	封装主体材料：	PLASTIC/EPOXY
封装等效代码：	FLNG,.53"H.SPACE	电源：	10,-5 V
射频/微波设备类型：	NARROW BAND MEDIUM POWER	子类别：	RF/Microwave Amplifiers
技术：	GAAS	Base Number Matches：	1

TMD5872-2-321 数据手册

MICROWAVE POWER MMIC AMPLIFIER

TMD5872-2-321

MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

FEATURES

Suitable for VSAT, UNII radio applications

High Power P1dB=31.7dBm(MIN.)

High Gain G1dB=26.7dB(MIN.)

High Power Added Efficiency hadd=21%(TYP.)

Broadband Operation f=5.8-6.475GHz.

ABSOLUTE MAXIMUM RATINGS(Ta=25^oC)

CHARACTERISTICS

DRAIN SUPPLY VOLTAGE

GATE SUPPLY VOLTAGE

INPUT POWER

SYMBOL

UNIT

RATINGS

VDD

VGG

-10

dBm

^oC

FLANGE TEMPERATURE

STORAGE TEMPERATURE

-30 - +80

-65 - +175

Tstg

^oC

RF PERFORMANCE SPECIFICATIONS (Ta=25 ^oC)

CHARACTERISTICS

Operaing Frequency

Output Power at 1dB

Gain Compression Point

Power Gain at 1dB

SYMBOL

CONDITION

UNIT

GHz

MIN.

5.8

TYP.

MAX.

6.475

P1dB

dBm

31.7

VDD=10V

VGG=-5V

G1dB

26.7

Gain Compression Point

Gain Flatness

IDD

1.2

+/- 2.0

1.6

Drain Current

Power Added Efficiency

VSWRin (small signal)

hadd

VSWRin

2.0:1

3.0:1

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA

for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or

otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein may be changed without prior notice. It is therefore advisable to contact TOSHIBA before proceeding with

design of equipment incorporating this product.

March. 1999

中文翻译

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