TMD0305-2

更新时间： 2024-11-06 03:27:15

品牌	Logo	应用领域
东芝 - TOSHIBA		射频和微波射频放大器微波放大器
页数	文件大小	规格书
2页	73K
描述
MICROWAVE POWER MMIC AMPLIFIER

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中文翻译

获取价格

技术参数
数据手册

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TMD0305-2 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	包装说明：	FLNG,.59"H.SPACE
Reach Compliance Code：	unknown	风险等级：	5.85
Is Samacsys：	N	特性阻抗：	50 Ω
构造：	MODULE	增益：	20 dB
最大输入功率 (CW)：	25 dBm	JESD-609代码：	e0
最大工作频率：	5100 MHz	最小工作频率：	3400 MHz
封装主体材料：	CERAMIC	封装等效代码：	FLNG,.59"H.SPACE
电源：	10 V	射频/微波设备类型：	WIDE BAND MEDIUM POWER
子类别：	RF/Microwave Amplifiers	最大压摆率：	1900 mA
技术：	GAAS	端子面层：	Tin/Lead (Sn/Pb)
最大电压驻波比：	3	Base Number Matches：	1

TMD0305-2 数据手册

MICROWAVE POWER MMIC AMPLIFIER

MICROWAVE SEMICONDUCTOR

TECHNICAL DATA

TMD0305-2

FEATURES

ꢀ HIGH POWER

P1dB=33.0dBm at 3.4GHz to 5.1GHz

ꢀ HIGH GAIN

ꢀBROAD BAND INTERNALLY MATCHED

ꢀHERMETICALLY SEALED PACKAGE

G1dB=22.0dB at 3.4GHz to 5.1GHz

ABSOLUTE MAXIMUM RATINGS ( Ta= 25 C )

CHARACTERISTICS

Drain Supply Voltage

SYMBOL

VDD

VGG

UNIT

RATING

Gate Supply Voltage

Input Power

-10

dBm

Flange Temperature

Storage Temperature

-30 ∼ +80

-65 ∼ +175

Tstg

RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )

CHARACTERISTICS

Output Power at 1dB Gain

Compression Point

Power Gain at 1dB Gain

Compression Point

Drain Current*

SYMBOL

CONDITIONS

UNIT MIN. TYP. MAX.

P1dB

dBm 32.0 33.0

⎯

VDD1=VDD2=VDD3

= 10V

G1dB

20.0 22.0

⎯

VGG= -5V

IDD

1.6

1.9

3.0

⎯

f = 3.4 – 5.1GHz

Input VSWR

VSWRin

⎯

* IDD = IDD1 + IDD2 + IDD3

ꢁThe information contained herein is presented only as a guide for the applications of our products. No responsibility is

assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,

No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA

before proceeding with design of equipment incorporating this product.

Rev. Mar.2006

中文翻译

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