Datasheet > TMBT3906

TMBT3906

更新时间： 2024-11-07 14:56:15

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
5页	201K
描述
PNP Bipolar Transistor, -50 V, -0.2 A, SOT-23(SOT23)

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TMBT3906 数据手册

TMBT3906

TOSHIBA Transistor Silicon PNP Epitaxial Type

TMBT3906

Audio Frequency General Purpose Amplifier Applications

 High voltage and high current

: V = −50 V, I = −200 mA (max)

CEO

 Complementary to TMBT3904

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Collector-base voltage

Symbol

Rating

Unit

CBO

CEO

EBO

−50

−5

Collector-emitter voltage

Emitter-base voltage

Collector current

−200

−30

320

Base current

1. Base

C (Note

2. Emitter

3. Collector

Collector power dissipation

)

1000

150

°C

C (Note 2

Junction temperature

Storage temperature range

−55 to 150

°C

SOT23

stg

Note: Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated

failure rate, etc).

Note 1: Mounted on an FR4 board.

(25.4mm x 25.4mm x 1.6mm, Cu Pad: 0.42mm²x 3)

Note 2: Mounted on an FR4 board.

(25.4mm x 25.4mm x 1.6mm, Cu Pad: 645mm²)

Marking

S W

Start of commercial production

2015-01

Toshiba Electronic Devices & Storage Corporation

2018-05-17

12 3 4 5

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