Datasheet > TMBRF40100CT

TMBRF40100CT

更新时间： 2024-11-12 17:15:55

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
2页	159K
描述
TO-220IS(1)

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中文翻译

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技术参数
数据手册

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TMBRF40100CT 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
风险等级：	5.82	二极管类型：	RECTIFIER DIODE

TMBRF40100CT 数据手册

SEMICONDUCTOR

TMBRF40100CT

SCHOTTKY BARRIER TYPE DIODE

TECHNICAL DATA

SWITCHING MODE POWER SUPPLY APPLICATION.

CONVERTER & CHOPPER APPLICATION.

FEATURES

DIM MILLIMETERS

10.16 0.2

· Average Output Rectified Current

: I_O=40A

15.87 0.2

2.54 0.2

0.8 0.1

· Repetitive Peak Reverse Voltage

: V_RRM=100V

3.18

0.1

3.3 0.1

12.57 0.2

· Low Forward Voltage

0.5 0.1

· Low Reverse Current

13.0 0.5

3.23 0.1

· Molding Compound Flammability Rating : UL 94V-0

· Pb-Free, Halogen-Free, RoHs Compliant

1.47 MAX

2.54 0.2

6.68 0.2

MAXIMUM RATING (Ta=25℃)

4.7

0.2

1. ANODE

2.76 0.2

CHARACTERISTIC

SYMBOL

V_RRM

RATING

100

UNIT

2. CATHODE

3. ANODE

Repetitive Peak Reverse Voltage

Average Output Rectified

Current

I_O

(Note)

TO-220IS (1)

Peak One Cycle Surge Forward

Current (Non-Repetitive 60Hz)

I_FSM

200

T_j

Junction Temperature

-40∼ 150

-55∼ 150

℃

T_stg

Storage Temperature Range

Note : average forward current of centertap full wave connection

℃

)

ELECTRICAL CHARACTERISTICS (Ta=25

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

0.42

0.54

0.67

MAX.

UNIT

I_FM=5A

V_FM

I_FM=10A

I_FM=20A

Peak Forward Voltage

(Note)

0.72

Repetitive Peak

Reverse Current

I_RRM

V_RRM=100V

100

μA

(Note)

C_J

V_R=0V, f=1MHz

Junction to Case

Junction Capacitance

2.4

R_th(j-c)

Thermal Resistance

(Note)

℃/W

Note : A value of one cell

2021. 11. 19

Revision No : 3

1/2

中文翻译

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