Datasheet > TMBRF30150CT

TMBRF30150CT

更新时间： 2024-11-12 17:15:47

品牌	Logo	应用领域
KEC		/
页数	文件大小	规格书
2页	214K
描述
TO-220IS(1)

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中文翻译

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数据手册

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TMBRF30150CT 数据手册

SEMICONDUCTOR

TMBRF30150CT

SCHOTTKY BARRIER TYPE DIODE

TECHNICAL DATA

SWITCHING MODE POWER SUPPLY APPLICATION.

CONVERTER & CHOPPER APPLICATION.

DIM MILLIMETERS

10.16 0.2

FEATURES

15.87 0.2

· Average Output Rectified Current

: I_O=30A.

2.54 0.2

0.8 0.1

3.18

0.1

· Repetitive Peak Reverse Voltage

: V_RRM=150V.

3.3 0.1

12.57 0.2

0.5 0.1

· Low Forward Voltage.

13.0 0.5

3.23 0.1

· Low Reverse Current.

1.47 MAX

· Molding Compound Flammability Rating : UL 94V-0

· Pb-Free, Halogen-Free, RoHs Compliant

2.54 0.2

6.68 0.2

4.7

0.2

1. ANODE

2.76 0.2

MAXIMUM RATING (Ta=25℃)

2. CATHODE

3. ANODE

CHARACTERISTIC

SYMBOL

V_RRM

RATING

150

UNIT

Repetitive Peak Reverse Voltage

Average Output Rectified Current

TO-220IS (1)

I_O

(Tc=75℃) (Note)

Peak One Cycle Surge Forward Current

(Non-Repetitive 60Hz)

I_FSM

215

T_j

Junction Temperature

-40∼ 150

-55∼ 150

℃

T_stg

Storage Temperature Range

Note : average forward current of centertap full wave connection.

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

0.45

0.80

1.10

MAX.

UNIT

I_FM=1A

V_FM

I_FM=7.5A

Peak Forward Voltage

(Note)

I_FM=15A

1.20

100

I_RRM

t_rr

V_RRM=150V

Repetitive Peak Reverse Current (Note)

μA

Reverse Recovery Time

Total Capacitance

(Note)

I_F=1A, V_R=30V, di/dt=-50A/μs

V_R=0V, f=1MHz

C_T

1250

R_th(j-c)

Thermal Resistance

Juction to Case

℃/W

Note : A value of one cell

2021. 11. 19

Revision No : 1

1/2

中文翻译

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