Datasheet > TMBR1100S

TMBR1100S

更新时间： 2024-11-12 17:00:43

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
4页	314K
描述
1A,100V,Surface Mount Small Signal Schottky Diodes

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中文翻译

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数据手册

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TMBR1100S 数据手册

Schottky Barrier Diode

TMBR1100 TMBR1100S

Features



Low power loss, high efficiency

Halogen free

Qualified to AEC-Q101 standards for high reliability

SOD-123

SOD-323

Mechanical Data



Case: SOD-123, SOD-323

Molding compound: UL flammability classification rating 94V-0

Terminals: Tin-plated; solderability per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

TMBR1100

SOD-123

SOD-323

3000 pcs / Tape & Reel

110

TMBR1100S

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter Symbol

Value

Unit

Peak Repetitive Reverse Voltage

V_RRM

V_RMS

I_F(AV)

I_FSM

100

RMS Reverse Voltage

Maximum Average Forward Output Current

Peak Forward Surge Current (8.3ms single half sine-wave)

Thermal Characteristics

Parameter

Symbol TMBR1100 TMBR1100S

Unit

250

Power Dissipation

P_D

T_J

500

°C

Operating junction Temperature

Storage Temperature Range

-55 ~ +150

T_STG

°C

Electrical Characteristics (@ T_A= 25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min.

Typ.

Max.

0.85

Unit

Forward Voltage

V_F

I_F= 1A

V_R= 100V, T_A= 25°C

V_R= 100V, T_J= 125°C

V_R= 4V, f = 1MHZ

μA

Maximum Peak Reverse Current

Typical Junction Capacitance

I_R

C_J

160

SSM0202A: February 2021

www.gmesemi.com

12 3 4

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