Datasheet > TMBF210

TMBF210

更新时间： 2024-11-12 01:05:11

品牌	Logo	应用领域
平伟 - PINGWEI		/
页数	文件大小	规格书
2页	212K
描述
SINGLE PHASE2.0AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS

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中文翻译

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数据手册

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TMBF210 数据手册

TMBF202 THRU TMBF210

SINGLE PHASE2.0AMPS. GLASS PASSIVATED BRIDGE RECTIFIERS

TMBF

FEATURE

.205(5.2)

.189(4.8)

.098(0.25)

.006(0.17)

.Glass passivated junction.

.Ideal for printed circuit board.

.Reliable low cost construction utilizing

molded plastic technique.

.350(8.9)

.335(8.5)

.315(8.0)

.299(7.6)

.High surge current capability.

.High temperature soldering guaranteed:

260℃/10 seconds at terminals.

.064(1.4)

.032(0.8)

MECHANICAL DATA

.024(0.6)

.008(0.2)

.043(1.1)

.035(0.9)

.Case Material: “Green” Molding compound,

UL flammability classification rating 94V-0,

“Free halogen”

.268(6.8)

.252(6.4)

.Moisture sensitivity level:level 2a,per J-STD-020

.Polarity:Polarity as marked on the body

.Weight: 0.204g (approximately)

.012(0.3)

.008(0.2)

.059(1.5)

.051(1.3)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%

SYM

TMBF

202

TMBF

204

TMBF

206

TMBF

208

TMBF

210

Type Number

BOL

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

200

400

600

800

1000

700

V_RRM

V_RMS

V_DC

160

320

420

560

Maximum DC blocking Voltage

Maximum Average Forward rectified Current

@ T_A=40℃

200

400

600

800

1000

2.0

I_F(AV)

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

I_FSM

Maximum Instantaneous

Forward Voltage

@I_F=1.0A DC

@I_F= 2.0A DC

1.0

1.1

V_F

I_R

Maximum DC Reverse Current @T_J=25°C

5.0

μA

at rated DC blocking voltage

I²t Rating for Fusing (t﹤8.3ms)

@T_J=125°C

500.0

14.9

A²Sec

I t

Typical Junction Capacitance Per Leg (Note1)

C_J

R_JA

R_JC

T_STG

T_J

Typical Thermal Resistance (Note2)

°C /W

Storage Temperature

Operating Junction Temperature

Note:

-55 to +150

°C

1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

2. Thermal resistance from Junction to case,lead and ambient in accordance with JESD-51.

Unit mounted on glass-epoxy substrate with 1oz/ft2-20×20mmcopper pad per pin with heat sink.

- 1 -

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