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TM4953BFS

更新时间: 2024-09-24 02:52:23
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微碧 - VBSEMI /
页数 文件大小 规格书
9页 1886K
描述
Dual P-Channel 30-V (D-S) MOSFET

TM4953BFS 数据手册

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TM4953S/FS  
www.VBsemi.tw  
Dual P-Channel 30-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free  
TrenchFET® Power MOSFET  
I
D (A)d, e  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
0.029 at VGS = - 10 V  
0.039 at VGS = - 4.5 V  
- 7.3  
- 6.3  
100 % UIS Tested  
RoHS  
- 30  
17 nC  
COMPLIANT  
APPLICATIONS  
Load Switches  
S
1
S
2
SO-8  
S
G
S
D
1
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
D
1
D
2
G
D
2
Top View  
D
1
D
2
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
Limit  
- 30  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
± 20  
- 7.3e  
TC = 25 °C  
- 7.0e  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
- 7.3a, b  
- 5.9a, b  
- 32e  
A
IDM  
IS  
Pulsed Drain Current  
- 4.1  
TC = 25 °C  
Continuous Source-Drain Diode Current  
- 2.0a, b  
- 20  
TA = 25 °C  
IAS  
Avalanche Current  
L = 0.1 mH  
EAS  
Single-Pulse Avalanche Energy  
20  
mJ  
W
T
C = 25 °C  
TC = 70 °C  
A = 25 °C  
TA = 70 °C  
5.0  
3.2  
PD  
Maximum Power Dissipation  
2.5a, b  
1.6a, b  
- 55 to 150  
T
TJ, Tstg  
Operating Junction and Storage Temperature Range  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Maximum Junction-to-Ambienta, c  
Symbol  
Typical  
38  
Maximum  
Unit  
°C/W  
RthJA  
RthJF  
t 10 s  
Steady State  
50  
25  
Maximum Junction-to-Foot  
20  
Notes:  
a. Surface mounted on 1" x 1" FR4 board.  
b. t = 10 s.  
c. Maximum under Steady State conditions is 85 °C/W.  
d. Based on TC = 25 °C.  
e. Limited by package.  
E-mail:China@VBsemi TEL:86-755-83251052  
1

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