TM341S-R

更新时间： 2024-10-31 22:15:11

品牌	Logo	应用领域
三垦 - SANKEN		可控硅
页数	文件大小	规格书
1页	35K
描述
TO-220F 3A Triac

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中文翻译

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数据手册

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TM341S-R 数据手册

TO-220F 3A Triac

TM341S-R, TM361S-R

■Features

●Repetitive peak off-state voltage: V_DRM=400, 600V

External Dimensions

±0.2

4.2

2.8

±0.2

(Unit: mm)

10.0

3.3

C0.5

●RMS on-state current: I_T(RMS)=3A

●Gate trigger current: I_GT=12mA max (MODE , ,

)

●Isolation voltage: V_ISO=1500V(50Hz Sine wave, RMS)

●For resistive load

±0.15

1.35

±0.15

1.35

0.85

+0.2

–0.1

●UL approved type available

+0.2

–0.1

±0.2

2.54

2.54 0.45

2.4

±0.2

2.2

(1). Terminal 1 (T₁)

(2). Terminal 2 (T₂)

(3). Gate(G)

a. Part Number

b. Lot Number

(1) (2) (3)

Weight: Approx. 2.1g

■Absolute Maximum Ratings

Ratings

Parameter

Symbol

Unit

Conditions

TM341S-R

400

TM361S-R

600

Repetitive peak off-state voltage

RMS on-state current

Surge on-state current

Peak gate voltage

V_DRM

I_T(RMS)

I_TSM

V_GM

I_GM

3.0

—

Conduction angle 360°, Tc=109°C

50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C

Peak gate current

0.5

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

Isolation voltage

P_GM

P_G(AV)

0.3

–40 to

125

°C

Vrms

Tstg

V_ISO

1500

50Hz Sine wave, RMS, Terminal to Case, 1 min.

■Electrical Characteristics

Ratings

typ

Parameter

Symbol

Unit

Conditions

min

max

2.0

0.1

1.6

1.8

1.2

V_D

V_DRM, R_GK

, Tj

125°C

25°C

∞

Off-state current

I_DRM

V_TM

V_D=

V_DRM, R_GK

, Tj=

∞

On-state voltage

Pulse test, I_TM=5A

1.3

0.7

0.8

3.0

T₂⁺, G⁺

T₂⁺, G^–

T₂^–, G^–

T₂^–, G⁺

T₂⁺, G⁺

T₂⁺, G^–

T₂^–, G^–

T₂^–, G⁺

Gate trigger voltage

V_GT

V_D=

6V, R_L

10Ω, T_C

25°C

Gate trigger current

I_GT

V_D=

6V, R_L

10Ω, T_C

Gate non-trigger voltage

Holding current

V_GD

I_H

0.1

V_D

1/2×V_DRM, Tj=125°C

V_D=

Thermal resistance

Rth

5.0

°C/W

Junction to case

中文翻译

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