TM341

更新时间： 2024-10-31 22:19:31

品牌	Logo	应用领域
三垦 - SANKEN		可控硅
页数	文件大小	规格书
2页	66K
描述
TO-220 3A Triac

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中文翻译

获取价格

数据手册

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TM341 数据手册

TO-220 3A Triac

TM341M-L, TM361M-L

■Features

●Repetitive peak off-state voltage: V_DRM=400, 600V

External Dimensions

5.0max

(Unit: mm)

10.4max

2.1max

●RMS on-state current: I_T(RMS)=3A

●Gate trigger Current: I_GT=20mAmax (MODE , ,

)

±0.1

3.75

±0.15

1.35

+0.2

–0.1

0.65

±0.2

±0.1

1.7

2.5

(1). Terminal 1 (T₁)

(2). Terminal 2 (T₂)

(3). Gate(G)

a. Part Number

b. Lot Number

(1) (2) (3)

Weight: Approx. 2.6g

■Absolute Maximum Ratings

Ratings

Parameter

Symbol

Unit

Conditions

TM341M-L

400

TM361M-L

600

Repetitive peak off-state voltage

RMS on-state current

Surge on-state current

Peak gate voltage

V_DRM

I_T(RMS)

I_TSM

V_GM

I_GM

3.0

Conduction angle 360°, Tc=115°C

50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C

Peak gate current

0.5

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

P_GM

P_G(AV)

°C

0.3

–40 to

125

Tstg

+125

■Electrical Characteristics

(Tj=25°C, unless otherwise specified)

Ratings

typ

Parameter

Symbol

Unit

Conditions

min

max

2.0

0.1

1.6

2.0

0.3

V_D

V_DRM, R_GK

, Tj

125°C

25°C

∞

I_DRM

V_TM

Off-state current

On-state voltage

V_D=

V_DRM, R_GK

, Tj=

Pulse test, I_TM=5A

0.7

0.8

T₂⁺, G⁺

T₂⁺, G^–

T₂^–, G^–

T₂^–, G⁺

T₂⁺, G⁺

T₂⁺, G^–

T₂^–, G^–

T₂^–, G⁺

Gate trigger voltage

Gate trigger current

V_GT

V_D=

6V, R_L=10Ω, T_C

25°C

I_GT

V_D=

6V, R_L=10Ω, T_C

Gate non-trigger voltage

Holding current

V_GD

I_H

0.2

V_D

1/2×V_DRM, Tj=125°C

V_D=

Thermal resistance

Rth

3.0

°C/W

Junction to case

中文翻译

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