TM1641P-L

更新时间： 2024-09-23 22:42:07

品牌	Logo	应用领域
三垦 - SANKEN		可控硅
页数	文件大小	规格书
1页	35K
描述
TO-3P 16A Triac

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中文翻译

获取价格

数据手册

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TM1641P-L 数据手册

TO-3P 16A Triac

TM1641P-L(L), TM1661P-L(L)

■Features

●Repetitive peak off-state voltage: V_DRM=400, 600V

External Dimensions

±0.4

±0.2

(Unit: mm)

15.6

4.8

13.6

9.6

±0.1

2.0

●RMS on-state current: I_T(RMS)=16A

●Gate trigger current: I_GT=30mA max (MODE , ,

)

±0.1

3.2

+0.2

–0.1

0.65

1.4

–0.1

1.05

5.45

±0.1

5.45

(1). Terminal 1 (T₁)

(2). Terminal 2 (T₂)

(3). Gate(G)

a. Part Number

b. Lot Number

(1) (2) (3)

Weight: Approx. 6.1g

■Absolute Maximum Ratings

Ratings

Parameter

Symbol

Unit

Conditions

TM1641P-L(L) TM1661P-L(L)

Repetitive peak off-state voltage

RMS on-state current

Surge on-state current

Peak gate voltage

V_DRM

I_T(RMS)

I_TSM

V_GM

I_GM

400

600

160

Conduction angle 360°, Tc=103°C

50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C

Peak gate current

Peak gate power loss

Average gate power loss

Junction temperature

Storage temperature

P_GM

P_G(AV)

°C

0.5

–40 to

125

Tstg

■Electrical Characteristics

(Tj=25°C, unless otherwise specified)

Ratings

typ

Parameter

Symbol

Unit

Conditions

min

max

2.0

0.1

1.6

1.5

V_D

V_DRM, R_GK

, Tj

125°C

25°C

∞

I_DRM

V_TM

Off-state current

V_D=

V_DRM, R_GK

, Tj=

∞

Pulse test, I_TM=20A

On-state voltage

0.8

0.7

0.8

1.0

T₂⁺, G⁺

T₂⁺, G^–

T₂^–, G^–

T₂^–, G⁺

T₂⁺, G⁺

T₂⁺, G^–

T₂^–, G^–

T₂^–, G⁺

Gate trigger voltage

V_GT

V_D=

6V, R_L=10Ω, T_C

25°C

Gate trigger current

I_GT

V_D=

6V, R_L=10Ω, T_C

Gate non-trigger voltage

Holding current

V_GD

I_H

0.2

V_D

1/2×V_DRM, Tj=125°C

V_D=

Thermal resistance

Rth

1.2

°C/W

Junction to case

中文翻译

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