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TM1241M-L PDF预览

TM1241M-L

更新时间: 2024-11-18 13:14:51
品牌 Logo 应用领域
三垦 - SANKEN 可控硅
页数 文件大小 规格书
2页 67K
描述
TRIAC, 400V V(DRM), 12A I(T)RMS

TM1241M-L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.88最大直流栅极触发电流:30 mA
最大直流栅极触发电压:2 VJESD-609代码:e0
最大漏电流:2 mA最高工作温度:125 °C
最低工作温度:-40 °C最大均方根通态电流:12 A
断态重复峰值电压:400 V子类别:TRIACs
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
触发设备类型:TRIACBase Number Matches:1

TM1241M-L 数据手册

 浏览型号TM1241M-L的Datasheet PDF文件第2页 
TO-220F 12A Triac  
TM1241S-R, TM1261S-R  
Features  
Repetitive peak off-state voltage: VDRM=400, 600V  
External Dimensions  
±0.2  
4.2  
2.8  
±0.2  
±0.2  
(Unit: mm)  
φ
10.0  
3.3  
C0.5  
RMS on-state current: IT(RMS)=12A  
Gate trigger current: IGT=8mA max (MODE , ,  
)
a
b
Isolation voltage: VISO=1500V(50Hz Sine wave, RMS)  
For resistive load  
±0.15  
1.35  
±0.15  
1.35  
0.85  
+0.2  
0.1  
UL approved type available  
+0.2  
0.1  
±0.2  
2.54  
2.54 0.45  
2.4  
±0.2  
2.2  
(1). Terminal 1 (T1)  
(2). Terminal 2 (T2)  
(3). Gate(G)  
a. Part Number  
b. Lot Number  
(1) (2) (3)  
Weight: Approx. 2.1g  
Absolute Maximum Ratings  
Ratings  
Parameter  
Symbol  
Unit  
Conditions  
TM1241S-R  
400  
TM1261S-R  
600  
Repetitive peak off-state voltage  
RMS on-state current  
Surge on-state current  
Peak gate voltage  
VDRM  
IT(RMS)  
ITSM  
VGM  
IGM  
V
A
12  
Conduction angle 360°, Tc=84°C  
110  
2
A
50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125°C  
V
Peak gate current  
A
Peak gate power loss  
Average gate power loss  
Junction temperature  
Storage temperature  
Isolation voltage  
PGM  
PG(AV)  
Tj  
5
W
0.5  
W
40 to  
40 to  
+
+
125  
125  
°C  
°C  
Vrms  
Tstg  
VISO  
1500  
50Hz Sine wave, RMS, Terminal to Case, 1 min.  
Electrical Characteristics  
(Tj=25°C, unless otherwise specified)  
Ratings  
typ  
Parameter  
Symbol  
Unit  
Conditions  
min  
max  
2.0  
0.1  
1.6  
1.8  
1.2  
1.2  
VD  
=
VDRM, RGK  
=
=
, Tj  
=
125°C  
25°C  
mA  
V
Off-state current  
IDRM  
VTM  
VD=  
VDRM, RGK  
, Tj=  
On-state voltage  
Pulse test, ITM=16A  
1.1  
0.6  
0.7  
2.1  
5
T2+, G+  
T2+, G–  
T2, G–  
T2, G+  
T2+, G+  
T2+, G–  
T2, G–  
T2, G+  
Gate trigger voltage  
VGT  
V
VD=  
6V, RL=10, TC  
=
25°C  
25°C  
8
8
8
4.5  
5
Gate trigger current  
IGT  
mA  
VD=  
6V, RL=10, TC  
=
25  
Gate non-trigger voltage  
Holding current  
VGD  
IH  
0.1  
V
VD  
=
1/2×VDRM, Tj=125°C  
6
mA  
VD=  
6V  
Thermal resistance  
Rth  
3.0  
°C/W  
Junction to case  
58  

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