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TLVD4200-AS12 PDF预览

TLVD4200-AS12

更新时间: 2024-11-10 20:11:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 143K
描述
LED Display

TLVD4200-AS12 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.66
颜色@波长:Red最高工作温度:100 °C
最低工作温度:-40 °C峰值波长:650 nm
子类别:LED DisplaysBase Number Matches:1

TLVD4200-AS12 数据手册

 浏览型号TLVD4200-AS12的Datasheet PDF文件第2页浏览型号TLVD4200-AS12的Datasheet PDF文件第3页浏览型号TLVD4200-AS12的Datasheet PDF文件第4页浏览型号TLVD4200-AS12的Datasheet PDF文件第5页 
TLVD4200  
Vishay Semiconductors  
DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package  
FEATURES  
• High brightness  
• Wide viewing angle  
• Categorized for luminous flux  
• Available in DH red  
• Tinted clear package  
19231  
• Low power dissipation  
• Low self heating  
DESCRIPTION  
• Rugged design  
• High reliability  
• Compliant to RoHS Directive 2002/95/EC and in  
accordance to WEEE 2002/96/EC  
The TLVD4200 serie was developed for backlighting in  
the extrem bright double heterojunction (DH) red  
GaAlAs on GaAs technology. Due to its special shape  
the spatial distribution of the radiation is qualified for  
backlighting.  
APPLICATIONS  
To optimize the brightness of backlighting  
a
• Backlighting of display panels, LCD displays,  
symbols on switches, keyboards, graphic boards  
and measuring scales  
custom-built reflector (with scattering) is required.  
Uniform illumination can be enhanced by covering the  
front of the reflector with diffusor material.  
• Illumination of large areas e.g. dot matrix displays  
This is a bright and flexible solution for backlighting  
different areas.  
PRODUCT GROUP AND PACKAGE DATA  
• Product group: LED  
• Package: 3 mm backlighting  
• Product series: standard  
• Angle of half intensity: 85°  
PARTS TABLE  
PART  
COLOR, LUMINOUS FLUX  
Red, V > 40 mlm  
TECHNOLOGY  
TLVD4200  
GaAIAs on GaAs  
ABSOLUTE MAXIMUM RATINGS (T  
= 25 °C, unless otherwise specified)  
amb  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
VR  
6
V
mA  
A
Reverse voltage  
IF  
IFSM  
PV  
50  
DC forward current  
tp 10 µs  
1
100  
Surge forward current  
Power dissipation  
Tamb 60 °C  
mW  
°C  
°C  
°C  
°C  
Tj  
100  
Junction temperature  
Operating temperature range  
Storage temperature range  
Soldering temperature  
Tamb  
Tstg  
Tsd  
- 40 to + 100  
- 55 to + 100  
260  
t 5 s, 2 mm from body  
Thermal resistance junction/  
ambient  
RthJA  
400  
K/W  
** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902  
Document Number 83058  
Rev. 1.7, 20-Apr-11  
For technical support, please contact: LED@vishay.com  
This document is subject to change without notice.  
www.vishay.com  
1
THE PRODUCT DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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