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TLV342SIRUGR PDF预览

TLV342SIRUGR

更新时间: 2024-11-06 04:28:07
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路输出元件
页数 文件大小 规格书
30页 1002K
描述
LOW-VOLTAGE RAIL-TO-RAIT OUTPUT CMOS OPERATIONAL AMPLIFIERS

TLV342SIRUGR 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:QFN
包装说明:QFN-10针数:10
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01Factory Lead Time:1 week
风险等级:1.22Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.0002 µA25C 时的最大偏置电流 (IIB):0.0002 µA
最小共模抑制比:75 dB标称共模抑制比:90 dB
频率补偿:YES最大输入失调电压:4000 µV
JESD-30 代码:R-PQCC-N10JESD-609代码:e4
长度:1.5 mm低-偏置:YES
低-失调:NO微功率:YES
湿度敏感等级:1功能数量:2
端子数量:10最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:VQCCN封装等效代码:LCC10,.06X.08,20
封装形状:RECTANGULAR封装形式:CHIP CARRIER, VERY THIN PROFILE
包装方法:TR峰值回流温度(摄氏度):260
功率:NO电源:1.8/5 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:0.4 mm标称压摆率:0.9 V/us
子类别:Operational Amplifier最大压摆率:0.3 mA
供电电压上限:5.5 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子节距:0.5 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:2200 kHz最小电压增益:560
宽带:NO宽度:2 mm
Base Number Matches:1

TLV342SIRUGR 数据手册

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ꢀ ꢁꢂꢃ ꢄ ꢅ ꢆ ꢀ ꢁꢂꢃ ꢄ ꢇ ꢆ ꢀ ꢁꢂꢃ ꢄ ꢇ ꢈ ꢆ ꢀꢁꢂ ꢃꢄ ꢄ  
ꢁꢉ ꢊꢋꢂ ꢉꢁꢀꢌꢍ ꢎ ꢏꢌꢐ ꢁ ꢋꢀꢉ ꢋꢏꢌꢐ ꢁ ꢉ ꢑꢀ ꢒꢑꢀ ꢓꢔ ꢉ ꢈ ꢉ ꢒꢎꢏ ꢌꢀ ꢐꢉ ꢕꢌꢁ ꢌꢔ ꢒ ꢁꢐ ꢖꢐ ꢎꢏ ꢈ  
ꢊ ꢐꢀ ꢗ ꢈꢗ ꢑꢀ ꢘꢉ ꢊ ꢕ  
SLVS568C − JANUARY 2005 − REVISED NOVEMBER 2007  
D
D
1.8-V and 5-V Performance  
D
D
Input Referred Voltage Noise (at 10 kHz)  
. . . 20 nV//Hz  
Low Offset (A Grade)  
− 1.25 mV Max (255C)  
− 1.7 mV Max (−405C to 1255C)  
ESD Protection Exceeds JESD 22  
− 2000-V Human-Body Model (A114-A)  
− 200-V Machine Model (A115-A)  
D
D
D
D
D
D
D
D
D
Rail-to-Rail Output Swing  
D
Applications  
Wide Common-Mode Input Voltage  
− Cordless/Cellular Phones  
− Consumer Electronics (Laptops, PDAs)  
− Audio Pre-Amp for Voice  
− Portable/Battery-Powered Electronic  
Equipment  
− Supply Current Monitoring  
− Battery Monitoring  
− Buffers  
Range . . . −0.2 V to (V − 0.5 V)  
+
Input Bias Current . . . 1 pA (Typ)  
Input Offset Voltage . . . 0.3 mV (Typ)  
Low Supply Current . . . 70 µA/Channel  
Low Shutdown Current . . .  
10 pA (Typ) Per Channel  
Gain Bandwidth . . . 2.3 MHz (Typ)  
− Filters  
− Drivers  
Slew Rate . . . 0.9 V/µs (Typ)  
Turn-On Time From Shutdown  
. . . 5 µs (Typ)  
TLV341  
TLV341  
DRL (SOT-563) PACKAGE  
(TOP VIEW)  
DBV (SOT-23) OR DCK (SC-70) PACKAGE  
(TOP VIEW)  
V
V
+
SHDN  
IN+  
GND  
IN−  
GND  
IN+  
IN−  
1
2
3
6
5
4
1
2
3
6
5
4
+
SHDN  
OUT  
OUT  
TLV342  
TLV342  
TLV342S  
D (SOIC) OR DGK (MSOP) PACKAGE  
(TOP VIEW)  
RUG (QFN) PACKAGE  
(TOP VIEW)  
RUG (QFN) PACKAGE  
(TOP VIEW)  
1IN−  
10  
1IN−  
10  
1OUT  
1IN−  
1IN+  
GND  
V
+
1
2
3
4
8
7
6
5
1IN+  
9 1OUT  
1IN+  
9 1OUT  
1
2
3
4
1
2
3
4
2OUT  
2IN−  
2IN+  
GND  
NC  
8
7
6
NC  
GND  
SHDN  
2IN+  
8
7
6
NC  
V
V
+
+
2IN+  
2OUT  
2OUT  
5
5
2IN−  
2IN−  
NC − No internal connection  
NC − No internal connection  
TLV344  
D (SOIC) OR PW (TSSOP) PACKAGE  
(TOP VIEW)  
4OUT  
4IN−  
4IN+  
GND  
3IN+  
3IN−  
3OUT  
1OUT  
1IN−  
1IN+  
1
2
3
4
5
6
7
14  
13  
12  
11  
10  
9
V
+
2IN+  
2IN−  
8
2OUT  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢀꢤ  
Copyright 2007, Texas Instruments Incorporated  
ꢠ ꢤ ꢡ ꢠꢙ ꢚꢮ ꢜꢛ ꢟ ꢧꢧ ꢥꢟ ꢝ ꢟ ꢞ ꢤ ꢠ ꢤ ꢝ ꢡ ꢩ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

TLV342SIRUGR 替代型号

型号 品牌 替代类型 描述 数据表
TLV342IRUGRG4 TI

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TLV342IRUGR TI

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