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TLV2711IDBVT PDF预览

TLV2711IDBVT

更新时间： 2024-11-23 12:02:47
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
32页 813K
描述
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

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中文翻译

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TLV2711IDBVT 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOT-23
包装说明：SOT-23, 5 PIN针数：5
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：1 week
风险等级：0.76放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.00015 µA
25C 时的最大偏置电流 (IIB)：0.00006 µA最小共模抑制比：70 dB
标称共模抑制比：83 dB频率补偿：YES
最大输入失调电流 (IIO)：0.00006 µA最大输入失调电压：3000 µV
JESD-30 代码：R-PDSO-G5JESD-609代码：e4
长度：2.9 mm低-偏置：YES
低-失调：NO微功率：YES
湿度敏感等级：1功能数量：1
端子数量：5最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：LSSOP封装等效代码：TSOP5/6,.11,37
封装形状：RECTANGULAR封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
包装方法：TR峰值回流温度（摄氏度）：260
功率：NO电源：2.7/10 V
可编程功率：NO认证状态：Not Qualified
座面最大高度：1.45 mm最小摆率：0.005 V/us
标称压摆率：0.025 V/us子类别：Operational Amplifier
最大压摆率：0.025 mA供电电压上限：12 V
标称供电电压 (Vsup)：3 V表面贴装：YES
技术：CMOS温度等级：INDUSTRIAL
端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)端子形式：GULL WING
端子节距：0.95 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：65 kHz
最小电压增益：1000宽带：NO
宽度：1.6 mmBase Number Matches：1

TLV2711IDBVT 数据手册

 浏览型号TLV2711IDBVT的Datasheet PDF文件第2页浏览型号TLV2711IDBVT的Datasheet PDF文件第3页浏览型号TLV2711IDBVT的Datasheet PDF文件第4页浏览型号TLV2711IDBVT的Datasheet PDF文件第5页浏览型号TLV2711IDBVT的Datasheet PDF文件第6页浏览型号TLV2711IDBVT的Datasheet PDF文件第7页 
TLV2711, TLV2711Y  
Advanced LinCMOSRAIL-TO-RAIL  
MICROPOWER SINGLE OPERATIONAL AMPLIFIERS  
SLOS196A – AUGUST 1997 – REVISED MARCH 2001  
DBV PACKAGE  
(TOP VIEW)  
Output Swing Includes Both Supply Rails  
Low Noise . . . 21 nV/√Hz Typ at f = 1 kHz  
Low Input Bias Current . . . 1 pA Typ  
OUT  
1
2
3
5
4
V /GND  
DD–  
Very Low Power . . . 11 µA Per Channel Typ  
Common-Mode Input Voltage Range  
Includes Negative Rail  
V
DD+  
IN+  
IN–  
Wide Supply Voltage Range  
2.7 V to 10 V  
Available in the SOT-23 Package  
Macromodel Included  
†
EQUIVALENT INPUT NOISE VOLTAGE  
vs  
FREQUENCY  
description  
80  
V
R
T
A
= 3 V  
= 20 Ω  
= 25°C  
DD  
S
The TLV2711 is a single low-voltage operational  
amplifier available in the SOT-23 package. It  
consumes only 11 µA (typ) of supply current and  
is ideal for battery-power applications. Looking at  
Figure 1, the TLV2711 has a 3-V noise level of  
21 nV/√Hz at 1 kHz; five times lower than  
competitive SOT-23 micropower solutions. The  
device exhibits rail-to-rail output performance for  
increased dynamic range in single- or split-supply  
applications. The TLV2711 is fully characterized  
at 3 V and 5 V and is optimized for low-voltage  
applications.  
70  
60  
50  
40  
30  
20  
10  
0
The TLV2711, exhibiting high input impedance  
and low noise, is excellent for small-signal  
conditioning for high-impedance sources, such as  
piezoelectric transducers. Because of the micro-  
power dissipation levels combined with 3-V  
operation, these devices work well in hand-held  
monitoring and remote-sensing applications. In  
addition, the rail-to-rail output feature with single  
or split supplies makes this family a great choice  
when interfacing with analog-to-digital converters  
(ADCs).  
1
2
3
4
10  
10  
10  
10  
f – Frequency – Hz  
†
For all curves where V  
For all curves where V  
= 5 V, all loads are referenced to 2.5 V.  
= 3 V, all loads are referenced to 1.5 V.  
DD  
DD  
Figure 1. Equivalent Input Noise Voltage  
Versus Frequency  
2
With a total area of 5.6mm , the SOT-23 package only requires one-third the board space of the standard 8-pin  
SOIC package. This ultra-small package allows designers to place single amplifiers very close to the signal  
source, minimizing noise pick-up from long PCB traces.  
AVAILABLE OPTIONS  
PACKAGED DEVICES  
‡
CHIP FORM  
(Y)  
T
A
V
IO  
max AT 25°C  
SYMBOL  
†
SOT-23 (DBV)  
0°C to 70°C  
3 mV  
3 mV  
TLV2711CDBV  
TLV2711IDBV  
VAJC  
VAJI  
TLV2711Y  
–40°C to 85°C  
†
‡
The DBV package available in tape and reel only.  
Chip forms are tested at T = 25°C only.  
A
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Advanced LinCMOS is a trademark of Texas Instruments.  
Copyright 2001, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...32

中文翻译

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TLV2711IDBVT 替代型号

型号 品牌 替代类型 描述 数据表
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