生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | CERAMIC, DIP-8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.47 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.0003 µA |
25C 时的最大偏置电流 (IIB): | 0.00006 µA | 标称共模抑制比: | 83 dB |
频率补偿: | YES | 最大输入失调电压: | 1800 µV |
JESD-30 代码: | R-GDIP-T8 | 长度: | 9.58 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
电源: | +-1.35/+-5/2.7/10 V | 认证状态: | Not Qualified |
筛选级别: | MIL-PRF-38535 | 座面最大高度: | 5.08 mm |
最小摆率: | 0.008 V/us | 标称压摆率: | 0.02 V/us |
子类别: | Operational Amplifier | 最大压摆率: | 0.175 mA |
供电电压上限: | 12 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | MILITARY | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
标称均一增益带宽: | 46 kHz | 最小电压增益: | 700000 |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLV2422AMJGB | TI |
获取价格 |
DUAL OP-AMP, 1800uV OFFSET-MAX, 0.046MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 | |
TLV2422AMU | TI |
获取价格 |
Advanced LinCMOSE RAIL-TO-RAIL OUTPUT WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLI | |
TLV2422AMUB | TI |
获取价格 |
暂无描述 | |
TLV2422AQD | TI |
获取价格 |
Advanced LinCMOSE RAIL-TO-RAIL OUTPUT WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLI | |
TLV2422AQD | ROCHESTER |
获取价格 |
DUAL OP-AMP, 1800uV OFFSET-MAX, 0.046MHz BAND WIDTH, PDSO8, PLASTIC, SOIC-8 | |
TLV2422AQDG4 | TI |
获取价格 |
DUAL OP-AMP, 1800uV OFFSET-MAX, 0.046MHz BAND WIDTH, PDSO8, GREEN, PLASTIC, SOIC-8 | |
TLV2422AQDR | TI |
获取价格 |
Rail-to-Rail Output Wide-Input-Voltage Micropower Dual Op Amps 8-SOIC -40 to 125 | |
TLV2422AQDRG4Q1 | TI |
获取价格 |
Advanced LinCMOS⢠RAIL-TO-RAIL OUTPUT WIDE- | |
TLV2422AQDRQ1 | TI |
获取价格 |
Advanced LinCMOS⢠RAIL-TO-RAIL OUTPUT WIDE- | |
TLV2422CD | TI |
获取价格 |
Advanced LinCMOSE RAIL-TO-RAIL OUTPUT WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLI |