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TLV2362IPE4 PDF预览

TLV2362IPE4

更新时间: 2024-11-01 04:28:07
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
17页 490K
描述
HIGH-PERFORMANCE LOW-VOLTAGE OPERATIONAL AMPLIFIERS

TLV2362IPE4 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:DIP
包装说明:ROHS COMPLIANT, PLASTIC, DIP-8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:5.57
Is Samacsys:N放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.25 µA
25C 时的最大偏置电流 (IIB):0.15 µA标称共模抑制比:75 dB
频率补偿:YES最大输入失调电压:7500 µV
JESD-30 代码:R-PDIP-T8JESD-609代码:e4
长度:9.81 mm低-失调:NO
负供电电压上限:-3.5 V标称负供电电压 (Vsup):-1.5 V
功能数量:2端子数量:8
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:DIP
封装等效代码:DIP8,.3封装形状:RECTANGULAR
封装形式:IN-LINE包装方法:TUBE
峰值回流温度(摄氏度):NOT SPECIFIED电源:+-1.5/+-2.5 V
认证状态:Not Qualified座面最大高度:5.08 mm
标称压摆率:2.5 V/us子类别:Operational Amplifier
最大压摆率:6 mA供电电压上限:3.5 V
标称供电电压 (Vsup):1.5 V表面贴装:NO
技术:BIPOLAR温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:THROUGH-HOLE
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:6000 kHz
宽度:7.62 mmBase Number Matches:1

TLV2362IPE4 数据手册

 浏览型号TLV2362IPE4的Datasheet PDF文件第2页浏览型号TLV2362IPE4的Datasheet PDF文件第3页浏览型号TLV2362IPE4的Datasheet PDF文件第4页浏览型号TLV2362IPE4的Datasheet PDF文件第5页浏览型号TLV2362IPE4的Datasheet PDF文件第6页浏览型号TLV2362IPE4的Datasheet PDF文件第7页 
ꢀ ꢁꢂꢃ ꢄ ꢅ ꢆ ꢇ ꢀꢁꢂ ꢃꢄ ꢅꢃ  
ꢈꢉ ꢊ ꢈꢋꢌ ꢍꢎ ꢏꢐ ꢎꢑ ꢒꢓꢔꢍ ꢁ ꢐꢕꢋꢂꢐ ꢁꢀꢒꢊ ꢍ ꢐ ꢌꢍꢎ ꢒꢀ ꢉꢐ ꢓꢒꢁ ꢒꢑ ꢌ ꢁꢉ ꢏꢉ ꢍꢎ ꢖ  
SLOS195G − FEBRUARY 1997 − REVISED NOVEMBER 2003  
TLV2361 . . . DBV PACKAGE  
(TOP VIEW)  
D
Low Supply-Voltage  
Operation . . . V = 1 V Min  
CC  
D
D
D
D
Wide Bandwidth . . . 7 MHz Typ at  
= 2.5 V  
1
2
3
5
4
IN+  
V
CC+  
V
CC  
V
CC−  
IN−  
High Slew Rate . . . 3 V/µs Typ at  
= 2.5 V  
OUT  
V
CC  
Wide Output Voltage Swing . . . 2.4 V Typ  
at V = 2.5 V, R = 10 kΩ  
TLV2362 . . . D, DGK, P, PS, OR PW PACKAGE  
(TOP VIEW)  
CC  
L
Low Noise . . . 8 nV/Hz Typ at f = 1 kHz  
1OUT  
1IN−  
1IN+  
V
CC+  
1
2
3
4
8
7
6
5
2OUT  
2IN−  
2IN+  
description/ordering information  
The TLV236x devices are high-performance dual  
operational amplifiers built using an original  
Texas Instruments bipolar process. These  
devices can be operated at a very low supply  
V
CC−  
voltage ( 1 V), while maintaining a wide output swing. The TLV236x devices offer a dramatically improved  
dynamic range of signal conditioning in low-voltage systems. The TLV236x devices also provide higher  
performance than other general-purpose operational amplifiers by combining higher unity-gain bandwidth and  
faster slew rate. With their low distortion and low-noise performance, these devices are well suited for audio  
applications.  
ORDERING INFORMATION  
ORDERABLE  
PART NUMBER  
TOP-SIDE  
MARKING  
PACKAGE  
T
A
Reel of 3000  
Reel of 250  
Reel of 3000  
Reel of 250  
Reel of 2500  
Tube of 50  
TLV2361CDBVR  
TLV2361CDBVT  
TLV2361IDBVR  
TLV2361IDBVT  
TLV2362IDGKR  
TLV2362IP  
−0°C to 70°C  
SOT-23-5 (DBV)  
VAAC  
SOT-23-5 (DBV)  
VAAI  
MSOP/VSSOP (DGK)  
PDIP (P)  
YBS  
TLV2362IP  
Tube of 75  
TLV2362ID  
−40°C to 85°C  
SOIC (D)  
SOP (PS)  
2362I  
Reel of 2500  
Reel of 2000  
Tube of 150  
Reel of 2000  
TLV2362IDR  
TLV2362IPSR  
TLV2362IPW  
TLV2362IPWR  
TY2362  
TSSOP (PW)  
TY2362  
Package drawings, standard packing quantities, thermal data, symbolization, and PCB design guidelines are  
available at www.ti.com/sc/package.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢀꢥ  
Copyright 2003, Texas Instruments Incorporated  
ꢡ ꢥ ꢢ ꢡꢚ ꢛꢯ ꢝꢜ ꢠ ꢨꢨ ꢦꢠ ꢞ ꢠ ꢟ ꢥ ꢡ ꢥ ꢞ ꢢ ꢪ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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