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TLV2354

更新时间: 2024-10-29 22:37:11
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德州仪器 - TI /
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20页 302K
描述
LinCMOSE QUADRUPLE LOW-VOLTAGE DIFFERENTIAL COMPARATORS

TLV2354 数据手册

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TLV2354, TLV2354Y  
LinCMOS QUADRUPLE LOW-VOLTAGE DIFFERENTIAL COMPARATORS  
SLCS012B – MAY 1992 – REVISED MARCH 1999  
Wide Range of Supply Voltages  
2 V to 8 V  
Fast Response Time . . . 200 ns Typ for  
TTL-Level Input Step  
Fully Characterized at 3 V and 5 V  
Extremely Low Input Bias Current  
5 pA Typ  
Very-Low Supply-Current Drain  
240 µA Typ at 3 V  
Output Compatible With TTL, MOS, and  
CMOS  
Common-Mode Input Voltage Range  
Includes Ground  
Built-In ESD Protection  
12  
High Input Impedance . . . 10 Typ  
description  
symbol (each comparator)  
The TLV2354 consists of four independent,  
low-power comparators specifically designed for  
single power-supply applications and operateS  
with power-supply rails as low as 2 V. When  
powered from a 3-V supply, the typical supply  
current is only 240 µA.  
IN+  
OUT  
IN–  
The TLV2354 is designed using the Texas Instruments LinCMOS technology and, therefore, features an  
12  
extremely high input impedance (typically greater than 10 ), which allows direct interfacing with  
high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup  
resistor to provide a positive output voltage swing, and they can be connected to achieve positive-logic  
wired-ANDrelationships. TheTLV2354Iisfullycharacterizedforoperationfrom40°Cto85°C. TheTLV2354M  
is fully characterized for operation from – 55°C to 125°C.  
The TLV2354 has internal electrostatic-discharge (ESD)-protection circuits and has been classified with a  
1000-V ESD rating using Human Body Model testing. However, care should be exercised in handling this device  
as exposure to ESD may result in degradation of the device parametric performance.  
AVAILABLE OPTIONS  
PACKAGED DEVICES  
CHIP  
V
max  
CHIP  
CARRIER  
(FK)  
CERAMIC  
DIP  
PLASTIC  
DIP  
CERAMIC  
FLATPACK  
(W)  
IO  
SMALL  
T
A
FORM  
(Y)  
TSSOP  
(PW)  
at 25°C  
OUTLINE  
(J)  
(N)  
(D)  
40°C to  
85°C  
5 mV  
5 mV  
TLV2354ID  
TLV2354IN TLV2354IPWLE  
TLV2354Y  
55°C to  
125°C  
TLV2354MFK  
TLV2354MJ  
TLV2354MW  
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLV2352IDR).  
The PW packages are only available left-ended taped and reeled (e.g., TLV2354IPWLE).  
These devices have limited built-in protection. The leads should be shorted together or the device placed in conductive foam during  
storage or handling to prevent electrostatic damage to the MOS gates.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
LINCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1999, Texas Instruments Incorporated  
On products compliant to MIL-PRF-38535, all parameters are tested  
unless otherwise noted. On all other products, production  
processing does not necessarily include testing of all parameters.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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