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TLV2352IDR PDF预览

TLV2352IDR

更新时间： 2024-11-13 21:53:43
品牌 Logo 应用领域
德州仪器 - TI 比较器放大器放大器电路光电二极管
页数 文件大小 规格书
21页 310K
描述
LinCMOSE DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS

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中文翻译

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TLV2352IDR 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOIC-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.39.00.01Factory Lead Time：1 week
风险等级：5.36Is Samacsys：N
放大器类型：COMPARATOR最大平均偏置电流 (IIB)：0.002 µA
25C 时的最大偏置电流 (IIB)：0.002 µA最大输入失调电压：7000 µV
JESD-30 代码：R-PDSO-G8JESD-609代码：e4
长度：4.9 mm湿度敏感等级：1
功能数量：2端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
输出类型：OPEN-DRAIN封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
包装方法：TR峰值回流温度（摄氏度）：260
电源：3/5 V认证状态：Not Qualified
标称响应时间：640 ns座面最大高度：1.75 mm
子类别：Comparator最大压摆率：0.15 mA
供电电压上限：8 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：3.9 mmBase Number Matches：1

TLV2352IDR 数据手册

 浏览型号TLV2352IDR的Datasheet PDF文件第2页浏览型号TLV2352IDR的Datasheet PDF文件第3页浏览型号TLV2352IDR的Datasheet PDF文件第4页浏览型号TLV2352IDR的Datasheet PDF文件第5页浏览型号TLV2352IDR的Datasheet PDF文件第6页浏览型号TLV2352IDR的Datasheet PDF文件第7页 
TLV2352, TLV2352Y  
LinCMOS DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS  
SLCS011B – MAY 1992 – REVISED MARCH 1999  
12  
Wide Range of Supply Voltages  
High Input Impedance . . . 10 Ω Typ  
2 V to 8 V  
Extremely Low Input Bias Current  
5 pA Typ  
Fully Characterized at 3 V and 5 V  
Very-Low Supply-Current Drain  
Common-Mode Input Voltage Range  
Includes Ground  
120 µA Typ at 3 V  
Output Compatible With TTL, MOS, and  
CMOS  
Built-In ESD Protection  
Fast Response Time . . . 200 ns Typ for  
TTL-Level Input Step  
symbol (each comparator)  
description  
The TLV2352 consists of two independent,  
low-power comparators specifically designed for  
single power-supply applications and operates  
with power-supply rails as low as 2 V. When  
powered from a 3-V supply, the typical supply  
current is only 120 µA.  
IN+  
OUT  
IN–  
The TLV2352 is designed using the Texas Instruments LinCMOS technology and therefore features an  
12  
extremely high input impedance (typically greater than 10 Ω), which allows direct interfacing with  
high-impedance sources. The outputs are N-channel open-drain configurations that require an external pullup  
resistor to provide a positive output voltage swing, and they can be connected to achieve positive-logic  
wired-AND relationships. The TLV2352I is fully characterized at 3 V and 5 V for operation from – 40°C to 85°C.  
The TLV2352M is fully characterized at 3 V and 5 V for operation from – 55°C to 125°C.  
The TLV2352 has internal electrostatic-discharge (ESD)-protection circuits and has been classified with a  
1000-V ESD rating using Human Body Model testing. However, care should be exercised in handling this device  
as exposure to ESD may result in degradation of the device parametric performance.  
AVAILABLE OPTIONS  
PACKAGED DEVICES  
CHIP  
V
max  
CHIP  
CARRIER  
(FK)  
CERAMIC  
DIP  
PLASTIC  
DIP  
PLASTIC  
DIP  
IO  
SMALL  
T
A
FORM  
(Y)  
TSSOP  
(PW)  
at 25°C  
OUTLINE  
‡
†
(JG)  
(P)  
(U)  
(D)  
–40°C to  
85°C  
5 mV  
5 mV  
TLV2352ID  
—
—
—
TLV2352IP TLV2352IPWLE  
—
TLV2352Y  
–55°C to  
125°C  
TLV2352MFK  
TLV2352MJG  
—
—
TLV2352MU  
†
‡
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLV2352IDR).  
The PW packages are only available left-ended taped and reeled (e.g., TLV2352IPWLE)  
These devices have limited built-in protection. The leads should be shorted together or the device placed in conductive foam during  
storage or handling to prevent electrostatic damage to the MOS gates.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1999, Texas Instruments Incorporated  
On products compliant to MIL-PRF-38535, all parameters are tested  
unless otherwise noted. On all other products, production  
processing does not necessarily include testing of all parameters.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...21

中文翻译

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TLV2352IDR 替代型号

型号 品牌 替代类型 描述 数据表
TLV2352IDRG4 TI

类似代替

 DUAL COMPARATOR, 7000uV OFFSET-MAX, 640ns RESPONSE TIME, PDSO8, GREEN, PLASTIC, SO-8
TLV2352ID TI

类似代替

 LinCMOSE DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS

与TLV2352IDR相关器件

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TLV2352IDRG4 TI

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TLV2352IP TI

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 		LinCMOSE DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS
TLV2352IPE4 TI

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TLV2352IPW TI

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TLV2352IPWLE TI

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TLV2352IPWR TI

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 		LinCMOSE DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS
TLV2352M TI

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 		LinCMOS™ 双路低电压差分比较器
TLV2352MFK TI

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 		LinCMOSE DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS
TLV2352MFKB TI

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 		LinCMOSE DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS
TLV2352MJG TI

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 		LinCMOSE DUAL LOW-VOLTAGE DIFFERENTIAL COMPARATORS

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