TLV2341, TLV2341Y
LinCMOS PROGRAMMABLE LOW-VOLTAGE
OPERATIONAL AMPLIFIERS
SLOS110A – MAY 1992 – REVISED AUGUST 1994
12
Wide Range of Supply Voltages Over
Specified Temperature Range:
High Input Impedance . . . 10 Ω Typ
Low Noise . . . 25 nV/√Hz Typically at
T = –40°C to 85°C . . . 2 V to 8 V
A
f = 1 kHz (High-Bias Mode)
Fully Characterized at 3 V and 5 V
Single-Supply Operation
ESD-Protection Circuitry
Designed-In Latch-Up Immunity
Common-Mode Input-Voltage Range
Extends Below the Negative Rail and up to
Bias-Select Feature Enables Maximum
Supply Current Range From 17 µA to
1.5 mA at 25°C
V
–1 V at 25°C
DD
Output Voltage Range Includes Negative
Rail
D OR P PACKAGE
(TOP VIEW)
PW PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
OFFSET N1
IN–
BIAS SELECT
OFFSET N1
IN–
BIAS SELECT
1
2
3
4
8
7
6
5
V
V
DD
DD
IN+
GND
OUT
OFFSET N2
IN+
GND
OUT
OFFSET N2
description
The TLV2341 operational amplifier has been specifically developed for low-voltage, single-supply applications
and is fully specified to operate over a voltage range of 2 V to 8 V. The device uses the Texas Instruments
silicon-gate LinCMOS technology to facilitate low-power, low-voltage operation and excellent offset-voltage
stability. LinCMOS technology also enables extremely high input impedance and low bias currents allowing
direct interface to high-impedance sources.
The TLV2341 offers a bias-select feature, which allows the device to be programmed with a wide range of
different supply currents and therefore different levels of ac performance. The supply current can be set at
17 µA, 250 µA, or 1.5 mA, which results in slew-rate specifications between 0.02 and 2.1 V/µs (at 3 V).
The TLV2341 operational amplifiers are especially well suited to single-supply applications and are fully
specified and characterized at 3-V and 5-V power supplies. This low-voltage single-supply operation combined
with low power consumption makes this device a good choice for remote, inaccessible, or portable
battery-powered applications. The common-mode input range includes the negative rail.
The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The
TLV2341 incorporates internal ESD-protection circuits that prevents functional failures at voltages up to
2000 V as tested under MIL-STD 883 C, Methods 3015.2; however, care should be exercised in handling these
devices as exposure to ESD may result in the degradation of the device parametric performance.
AVAILABLE OPTIONS
PACKAGED DEVICES
CHIP
V
max
IO
SMALL
OUTLINE
(D)
PLASTIC
DIP
FORM
(Y)
T
A
TSSOP
(PW)
AT 25°C
(P)
–40°C to 85°C
8 mV
TLV2341ID
TLV2341IP
TLV2341IPWLE
TLV2341Y
The D package is available taped and reeled. Add R suffix to the device type (e.g., TLV2341IDR).
The PW package is only available left-end taped and reeled (e.g., TLV2341IPWLE).
LinCMOS is a trademark of Texas Instruments Incorporated.
Copyright 1994, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
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POST OFFICE BOX 655303 • DALLAS, TEXAS 75265