是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | SOIC |
包装说明: | GREEN, PLASTIC, SOIC-8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.35 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.002 µA |
标称共模抑制比: | 88 dB | 频率补偿: | YES |
最大输入失调电压: | 11000 µV | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e4 | 长度: | 4.9 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 湿度敏感等级: | 1 |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 包装方法: | TUBE |
峰值回流温度(摄氏度): | 260 | 电源: | 2/8 V |
认证状态: | Not Qualified | 座面最大高度: | 1.75 mm |
标称压摆率: | 0.02 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 0.054 mA | 供电电压上限: | 8 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 标称均一增益带宽: | 27 kHz |
最小电压增益: | 50000 | 宽度: | 3.9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLV2322IDR | TI |
获取价格 |
LinCMOSE LOW-VOLTAGE LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2322IDRG4 | TI |
获取价格 |
LinCMOSE LOW-VOLTAGE LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2322IP | TI |
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LinCMOSE LOW-VOLTAGE LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2322IPE4 | TI |
获取价格 |
LinCMOSE LOW-VOLTAGE LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2322IPW | TI |
获取价格 |
LinCMOSE LOW-VOLTAGE LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2322IPWG4 | TI |
获取价格 |
LinCMOSE LOW-VOLTAGE LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2322IPWLE | TI |
获取价格 |
LinCMOSE LOW-VOLTAGE LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2322IPWR | TI |
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LinCMOSE LOW-VOLTAGE LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2322IPWRG4 | TI |
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LinCMOSE LOW-VOLTAGE LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2322Y | TI |
获取价格 |
LinCMOSE LOW-VOLTAGE LOW-POWER OPERATIONAL AMPLIFIERS |