是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | ROHS COMPLIANT, PLASTIC, DIP-8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.53 |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB): | 0.001 µA | 25C 时的最大偏置电流 (IIB): | 0.00006 µA |
标称共模抑制比: | 75 dB | 频率补偿: | YES |
最大输入失调电压: | 1750 µV | JESD-30 代码: | R-PDIP-T8 |
JESD-609代码: | e4 | 长度: | 9.59 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | +-1.35/+-4/2.7/8 V |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
最小摆率: | 0.05 V/us | 标称压摆率: | 0.1 V/us |
子类别: | Operational Amplifier | 最大压摆率: | 0.15 mA |
供电电压上限: | 16 V | 标称供电电压 (Vsup): | 3 V |
表面贴装: | NO | 技术: | CMOS |
温度等级: | AUTOMOTIVE | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
标称均一增益带宽: | 187 kHz | 最小电压增益: | 10000 |
宽度: | 7.62 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLV2252M | TI |
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低电压轨到轨微功耗高级 LinCMOS™ 双路运算放大器 | |
TLV2252MFK | TI |
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Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252MFKB | TI |
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ADVANCED LINCMOS RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252MJG | TI |
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Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252MJGB | TI |
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ADVANCED LINCMOS RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252MU | TI |
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Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252MUB | TI |
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ADVANCED LINCMOS RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252-Q1 | TI |
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Advanced LinCMOS⢠RAIL-TO-RAIL VERY LOW-POW | |
TLV2252QD | TI |
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Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252QDG4 | TI |
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Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER POERATIONAL AMPLIFIERS |