是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | QLCC |
包装说明: | CERAMIC, LCC-20 | 针数: | 20 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.85 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.001 µA |
25C 时的最大偏置电流 (IIB): | 0.00006 µA | 标称共模抑制比: | 77 dB |
频率补偿: | YES | 最大输入失调电压: | 1000 µV |
JESD-30 代码: | S-CQCC-N20 | 长度: | 8.89 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 功能数量: | 2 |
端子数量: | 20 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | QCCN | 封装等效代码: | LCC20,.35SQ |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | +-1.35/+-4/2.7/8 V |
认证状态: | Not Qualified | 筛选级别: | MIL-STD-883 |
座面最大高度: | 2.03 mm | 最小摆率: | 0.05 V/us |
标称压摆率: | 0.1 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 0.15 mA | 供电电压上限: | 8 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | MILITARY |
端子形式: | NO LEAD | 端子节距: | 1.27 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
标称均一增益带宽: | 187 kHz | 最小电压增益: | 10000 |
宽度: | 8.89 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLV2252AMJG | TI |
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Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252AMJGB | TI |
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Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
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汽车类、高级 LinCMOS™ 轨到轨超低功耗双路精密运算放大器 | |
TLV2252AQD | TI |
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Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252AQDG4 | TI |
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TLV2252AQDR | TI |
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Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER OPERATIONAL AMPLIFIERS | |
TLV2252AQDREP | TI |
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TLV2252AQDRG4 | TI |
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Advanced LinCMOS RAIL-TO-RAIL VERY LOW-POWER POERATIONAL AMPLIFIERS | |
TLV2252AQDRG4Q1 | TI |
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Advanced LinCMOS⢠RAIL-TO-RAIL VERY LOW-POW |