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TLV2221CDBV PDF预览

TLV2221CDBV

更新时间： 2024-11-22 22:35:23
品牌 Logo 应用领域
德州仪器 - TI 运算放大器
页数 文件大小 规格书
29页 593K
描述
Advanced LinCMOSE RAIL-TO-RAIL VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS

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TLV2221CDBV 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SOT-23包装说明：PLASTIC, SOT-23, 5 PIN
针数：5Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.33.00.01
风险等级：5.7放大器类型：OPERATIONAL AMPLIFIER
最大平均偏置电流 (IIB)：0.00015 µA标称共模抑制比：82 dB
最大输入失调电压：3000 µVJESD-30 代码：R-PDSO-G5
JESD-609代码：e4长度：2.9 mm
湿度敏感等级：1负供电电压上限：
功能数量：1端子数量：5
最高工作温度：70 °C最低工作温度：
封装主体材料：PLASTIC/EPOXY封装代码：LSSOP
封装等效代码：TSOP5/6,.11,37封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, LOW PROFILE, SHRINK PITCH峰值回流温度（摄氏度）：260
认证状态：Not Qualified座面最大高度：1.45 mm
标称压摆率：0.18 V/us子类别：Operational Amplifier
供电电压上限：12 V标称供电电压 (Vsup)：3 V
表面贴装：YES技术：CMOS
温度等级：COMMERCIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：0.95 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：480 kHz宽度：1.6 mm
Base Number Matches：1

TLV2221CDBV 数据手册

 浏览型号TLV2221CDBV的Datasheet PDF文件第2页浏览型号TLV2221CDBV的Datasheet PDF文件第3页浏览型号TLV2221CDBV的Datasheet PDF文件第4页浏览型号TLV2221CDBV的Datasheet PDF文件第5页浏览型号TLV2221CDBV的Datasheet PDF文件第6页浏览型号TLV2221CDBV的Datasheet PDF文件第7页 
TLV2221, TLV2221Y  
Advanced LinCMOS RAIL-TO-RAIL  
VERY LOW-POWER SINGLE OPERATIONAL AMPLIFIERS  
SLOS157A – JUNE1996 – REVISED JANUARY 1997  
DBV PACKAGE  
(TOP VIEW)  
Output Swing Includes Both Supply Rails  
Low Noise . . . 19 nV/√Hz Typ at f = 1 kHz  
Low Input Bias Current . . . 1 pA Typ  
IN+  
1
2
3
5
4
V
DD+  
Fully Specified for Single-Supply 3-V and  
5-V Operation  
V
DD–  
/GND  
IN–  
Very Low Power . . . 110 µA Typ  
OUT  
Common-Mode Input Voltage Range  
Includes Negative Rail  
Wide Supply Voltage Range  
2.7 V to 10 V  
Macromodel Included  
description  
The TLV2221 is a single operational amplifier manufactured using the TexasInstrumentsAdvancedLinCMOS  
process. This device is optimized and fully specified for single-supply 3-V and 5-V operation. For this  
low-voltage operation combined with micropower dissipation levels, the input noise voltage performance has  
been dramatically improved using optimized design techniques for CMOS-type amplifiers. Another added  
benefit is that this amplifier exhibits rail-to-rail output swing. The output dynamic range can be extended using  
the TLV2221 with loads referenced midway between the rails. The common-mode input voltage range is wider  
than typical standard CMOS-type amplifiers. To take advantage of this improvement in performance and to  
make this device available for a wider range of applications, V  
voltage test limit of ± 5 mV, allowing a minimum of 0-V to 2-V common-mode input voltage range for a 3-V power  
is specified with a larger maximum input offset  
ICR  
supply.  
AVAILABLE OPTIONS  
CHIP  
FORM  
(Y)  
PACKAGED DEVICES  
T
A
V
IO  
max AT 25°C  
SYMBOL  
†
SOT-23 (DBV)  
0°C to 70°C  
3 mV  
3 mV  
TLV2221CDBV  
TLV2221IDBV  
VADC  
VADI  
TLV2221Y  
–40°C to 85°C  
†
The DBV package available in tape and reel only.  
The Advanced LinCMOS process uses a silicon-gate technology to obtain input offset voltage stability with  
temperatureandtimethatfarexceedsthatobtainableusingmetal-gatetechnology. Thistechnologyalsomakes  
possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive  
dielectric-isolated devices.  
The TLV2221, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for  
high-impedance sources such as piezoelectric transducers. Because of the low power dissipation levels  
combined with 3-V operation, this device works well in hand-held monitoring and remote-sensing applications.  
In addition, the rail-to-rail output feature with single or split power supplies makes this device an excellent choice  
when interfacing directly to analog-to-digital converters (ADCs). All of these features combined with its  
temperature performance make the TLV2221 ideal for remote pressure sensors, temperature control, active  
voltage-resistive (VR) sensors, accelerometers, hand-held metering devices, and many other applications.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Advanced LinCMOS is a trademark of Texas Instruments Incorporated.  
Copyright 1997, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...29

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