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TLV2211IDBVT PDF预览

TLV2211IDBVT

更新时间: 2024-11-23 12:28:27
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
31页 713K
描述
Advanced LinCMOS RAIL-TO-RAIL MICROPOWER SINGLE OPERATIONAL AMPLIFIERS

TLV2211IDBVT 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT-23
包装说明:SOT-23, 5 PIN针数:5
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:0.81
Is Samacsys:N放大器类型:OPERATIONAL AMPLIFIER
架构:VOLTAGE-FEEDBACK最大平均偏置电流 (IIB):0.00006 µA
25C 时的最大偏置电流 (IIB):0.00006 µA最小共模抑制比:70 dB
标称共模抑制比:83 dB频率补偿:YES
最大输入失调电流 (IIO):0.00006 µA最大输入失调电压:3000 µV
JESD-30 代码:R-PDSO-G5JESD-609代码:e4
长度:2.9 mm低-偏置:YES
低-失调:NO微功率:YES
湿度敏感等级:1功能数量:1
端子数量:5最高工作温度:85 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装代码:LSSOP封装等效代码:TSOP5/6,.11,37
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH
包装方法:TR峰值回流温度(摄氏度):260
功率:NO电源:3/5 V
可编程功率:NO认证状态:Not Qualified
座面最大高度:1.45 mm最小摆率:0.005 V/us
标称压摆率:0.025 V/us子类别:Operational Amplifier
最大压摆率:0.025 mA供电电压上限:12 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED标称均一增益带宽:65 kHz
最小电压增益:1000宽带:NO
宽度:1.6 mmBase Number Matches:1

TLV2211IDBVT 数据手册

 浏览型号TLV2211IDBVT的Datasheet PDF文件第2页浏览型号TLV2211IDBVT的Datasheet PDF文件第3页浏览型号TLV2211IDBVT的Datasheet PDF文件第4页浏览型号TLV2211IDBVT的Datasheet PDF文件第5页浏览型号TLV2211IDBVT的Datasheet PDF文件第6页浏览型号TLV2211IDBVT的Datasheet PDF文件第7页 
ꢀ ꢁꢂꢃ ꢃ ꢄꢄ ꢅ ꢀꢁꢂ ꢃꢃ ꢄꢄꢆ  
  
ꢓꢇꢔ ꢁ ꢕꢀꢑ ꢕꢓ ꢇ ꢔꢁ  
SLOS156E − MAY 1996 − REVISED SEPTEMBER 2006  
DBV PACKAGE  
(TOP VIEW)  
D
D
D
D
D
Output Swing Includes Both Supply Rails  
Low Noise . . . 21 nV/Hz Typ at f = 1 kHz  
Low Input Bias Current . . . 1 pA Typ  
IN+  
1
2
3
5
4
V
DD+  
Very Low Power . . . 11 µA Per Channel Typ  
Common-Mode Input Voltage Range  
Includes Negative Rail  
V
DD−  
/GND  
IN−  
OUT  
D
Wide Supply Voltage Range  
2.7 V to 10 V  
D
Available in the SOT-23 Package  
Macromodel Included  
EQUIVALENT INPUT NOISE VOLTAGE  
D
vs  
FREQUENCY  
description  
80  
V
R
T
A
= 3 V  
= 20 Ω  
= 25°C  
The TLV2211 is a single low-voltage operational  
DD  
S
70  
60  
amplifier available in the SOT-23 package. It  
consumes only 11 µA (typ) of supply current and  
is ideal for battery-power applications. Looking at  
Figure 1, the TLV2211 has a 3-V noise level of  
22 nV/Hz at 1kHz; 5 times lower than competitive  
SOT-23 micropower solutions. The device  
exhibits rail-to-rail output performance for in-  
creased dynamic range in single- or split-supply  
applications. The TLV2211 is fully characterized  
at 3 V and 5 V and is optimized for low-voltage  
applications.  
50  
40  
30  
20  
10  
0
The TLV2211, exhibiting high input impedance  
and low noise, is excellent for small-signal  
conditioning for high-impedance sources, such as  
piezoelectric transducers. Because of the micro-  
power dissipation levels combined with 3-V  
operation, these devices work well in hand-held  
monitoring and remote-sensing applications. In  
addition, the rail-to-rail output feature with single  
or split supplies makes this family a great choice  
when interfacing with analog-to-digital converters  
(ADCs).  
1
2
3
4
10  
10  
10  
10  
f − Frequency − Hz  
All loads are referenced to 1.5 V.  
Figure 1. Equivalent Input Noise Voltage  
Versus Frequency  
AVAILABLE OPTIONS  
PACKAGED DEVICES  
CHIP FORM  
(Y)  
T
A
V
IO  
max AT 25°C  
SYMBOL  
SOT-23 (DBV)  
0°C to 70°C  
3 mV  
3 mV  
TLV2211CDBV  
TLV2211IDBV  
VACC  
VACI  
TLV2211Y  
40°C to 85°C  
The DBV package available in tape and reel only.  
Chip forms are tested at T = 25°C only.  
A
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Advanced LinCMOS is a trademark of Texas Instruments.  
ꢀꢍ  
Copyright 2001−2006, Texas Instruments Incorporated  
ꢢ ꢍ ꢣ ꢢꢎ ꢋꢭ ꢟꢞ ꢊ ꢧꢧ ꢥꢊ ꢠ ꢊ ꢡ ꢍ ꢢ ꢍ ꢠ ꢣ ꢨ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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