Datasheet > TLPN137

TLPN137

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
13页	344K
描述
Not Recommended for New Design

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TLPN137 数据手册

TLPN137,TLPN137(LF1)

Photocouplers GaAℓAs Infrared LED & Photo IC

TLPN137,TLPN137(LF1)

1. Applications

•

Factory Automation (FA)

High-Speed Digital Interfacing

Measuring Instruments

2. General

The Toshiba TLPN137 consists of a high-output GaAℓAs light-emitting diode coupled with integrated high gain,

high-speed photodetectors. It is housed in the DIP8 package. The TLPN137 succeeds the 6N137 which has been

released. The characteristics of the TLPN137 are similar as the 6N137. The TLPN137 has an internal Faraday

shield that provides a guaranteed common-mode transient immunity of ±10 kV/µs.

3. Features

(1) Inverter logic type (open collector output)

(2) Package: DIP8

(3) Operating temperature: -40 to 85 

(4) Supply voltage: 4.5 to 5.5 V

(5) Data transfer rate: 10 MBd (typ.) (NRZ)

(6) Threshold input current: 5.0 mA (max)

(7) Supply current: 4.0 mA (max)

(8) Common-mode transient immunity: ±10 kV/µs (min)

(9) Isolation voltage: 5000 Vrms (min)

(10) Safety standards

UL-approved: UL1577, File No.E67349

cUL-approved: CSA Component Acceptance Service No.5A File No.E67349

VDE-approved: EN60747-5-5, EN60065 or EN60950-1 (Note 1)

: EN62368-1 (Pending) (Note 1)

Note 1: When a VDE approved type is needed, please designate the Option (D4).

Start of commercial production

2011-09

2017-08-21

Rev.2.0

Toshiba Electronic Devices & Storage Corporation

12 3 4 5 6 7...13

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