TLP751

更新时间： 2024-01-19 08:48:52

品牌	Logo	应用领域
东芝 - TOSHIBA		/
页数	文件大小	规格书
8页	558K
描述
GaAГAs Ired + Photo IC

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技术参数
数据手册

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TLP751 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.8
最大正向电流：	0.025 A	最大正向电压：	1.85 V
最大绝缘电压：	5000 V	安装特点：	THROUGH HOLE MOUNT
元件数量：	1	最高工作温度：	100 °C
最低工作温度：	-55 °C	最大功率耗散：	0.1 W
子类别：	Optocoupler - Transistor Outputs	表面贴装：	NO
Base Number Matches：	1

TLP751 数据手册

TLP751

TOSHIBA Photocoupler GaAℓAs Ired + Photo IC

TLP751

Digital Logic Ground Isolation

Unit in mm

Line Receiver

Microprocessor System Interfaces

Switching Power Supply Feedback Control

Analog Signal Isolation

The TOSHIBA TLP751 consists of GaAℓAs high−output light

emitting diode and a high speed detector of one chip photo diode−

transistor. This unit is 8−lead DIP.

TLP751 has internal base connection. This base pin should be used for

analog application or enable operation. If base pin is open, output signal

will be noisy by environmental condition. For this case, TLP750 is

suitable.

Switching speed: t

= 0.3µs (typ.)

= 0.5µs (typ.)(R =1.9kΩ)

pHL

pLH

TOSHIBA

Weight: 0.54g

11−10C4

TTL compatible

UL recognized: UL1577, file no. E67349

BSI approved: BS EN60065: 1994,

Certificate no. 7613

Pin Configuration(top view)

BS EN60950: 1992,

Certificate no. 7614

Isolation voltage: 5000Vrms(min.)

Option(D4)type

VDE approved: DIN VDE0884 / 06.92,

Certificate no. 68384

Maximum operating insulation voltage: 890V

Highest permissible over voltage: 8000V

Schematic

(Note) When a VDE0884 approved type is needed,

please designate the “Option(D4)”

Creepage distance: 6.4mm(min.)

Clearance: 6.4mm(min.)

Insulation thickness: 0.4mm(min.)

2002-09-25

12 3 4 5 6 7 8

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