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TLP4172G PDF预览

TLP4172G

更新时间: 2024-11-24 22:42:07
品牌 Logo 应用领域
东芝 - TOSHIBA 光电继电器
页数 文件大小 规格书
6页 171K
描述
Photocoupler Photorelay

TLP4172G 技术参数

生命周期:Obsolete包装说明:11-5H1, SOP-4
Reach Compliance Code:unknown风险等级:5.81
其他特性:UL RECOGNIZED配置:SINGLE WITH BUILT-IN DIODE
最大正向电流:0.025 A最大绝缘电压:1500 V
元件数量:1最大通态电流:0.09 A
最大通态电阻:50 Ω最高工作温度:65 °C
最低工作温度:-20 °C光电设备类型:TRANSISTOR OUTPUT SSR
Base Number Matches:1

TLP4172G 数据手册

 浏览型号TLP4172G的Datasheet PDF文件第2页浏览型号TLP4172G的Datasheet PDF文件第3页浏览型号TLP4172G的Datasheet PDF文件第4页浏览型号TLP4172G的Datasheet PDF文件第5页浏览型号TLP4172G的Datasheet PDF文件第6页 
TLP4172G  
TOSHIBA Photocoupler Photorelay  
TLP4172G  
Telecommunication  
Measurement Equipment  
Security Equipment  
FA  
Unit: mm  
The Toshiba TLP4172G consists of an aluminum gallium arsenide  
infrared emitting diode optically coupled to a photo-MOSFET in a SOP  
package. This 1-form-B (NC) photorelay features a withstanding voltage  
of 350 V.  
4-pin SOP (2.54SOP4): Height = 2.1 mm, pitch = 2.54 mm  
Normally closed (1-form-B) device  
Peak off-state voltage: 350 V (min)  
Trigger LED current: 3 mA (max)  
On-state current: 90 mA (max)  
On-state resistance: 50 (max)  
Isolation voltage: 1500 Vrms (min)  
UL Recognized: UL1577, File No. E67349  
JEDEC  
Pin Configuration  
(top view)  
JEITA  
TOSHIBA  
Weight: 0.1 g (typ.)  
11-5H1  
1
4
2
3
1: Anode  
2: Cathode  
3: Drain  
4: Drain  
1
2004-07-26  

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