Datasheet > TLP185(SE

TLP185(SE

更新时间： 2024-01-06 07:02:19

品牌	Logo	应用领域
东芝 - TOSHIBA		输出元件光电
页数	文件大小	规格书
10页	247K
描述
Transistor Output Devices

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中文翻译

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技术参数
数据手册

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TLP185(SE 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	SOP-6/4	Reach Compliance Code：	unknown
Factory Lead Time：	12 weeks	风险等级：	1.19
其他特性：	UL RECOGNIZED	Coll-Emtr Bkdn Voltage-Min：	80 V
配置：	SINGLE	标称电流传输比：	50%
最大暗电源：	80 nA	最大正向电流：	0.05 A
最大绝缘电压：	3750 V	元件数量：	1
最高工作温度：	110 °C	最低工作温度：	-55 °C
光电设备类型：	TRANSISTOR OUTPUT OPTOCOUPLER	Base Number Matches：	1

TLP185(SE 数据手册

TLP185(SE

Photocouplers GaAs Infrared LED & Photo Transistor

TLP185(SE

1. Applications

•

Office Equipment

Programmable Logic Controllers (PLCs)

AC Adapters

I/O Interface Boards

2. General

The TLP185(SE consist of a photo transistor optically coupled to gallium arsenide infrared emitting diode.

The TLP185(SE photocoupler is housed in the very small and thin SO6 package.

Since TLP185(SE is smaller than DIP package, it's suitable for high-density surface mounting application such

as programmable controllers.

3. Features

(1) Collector-emitter voltage: 80 V (min)

(2) Current transfer ratio: 50% (min)

Rank GB: 100% (min)

(3) Isolation voltage: 3750 Vrms (min)

(4) Operating temperature: -55 to 110 

(5) UL-approved: UL1577, File No.E67349

cUL-approved: CSA Component Acceptance Service No.5A File No.E67349

BSI-conformity: BS EN60065: 2002, BS EN60950-1: 2006

VDE-Conformity: EN60747-5-5

4. Packaging and Pin Assignment

1: Anode

3: Cathod

4: Emitter

6: Collector

11-4M1S

5. Principle of Operation

5.1. Mechanical Parameters

Characteristics

Creepage distances

Min

Unit

5.0

0.4

Clearance

Internal isolation thickness

2013-05-15

Rev.1.0

12 3 4 5 6 7...10

中文翻译

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