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TLEGE1100B PDF预览

TLEGE1100B

更新时间: 2024-11-09 03:33:47
品牌 Logo 应用领域
东芝 - TOSHIBA /
页数 文件大小 规格书
10页 228K
描述
Panel Circuit Indicator

TLEGE1100B 技术参数

是否Rohs认证: 不符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.85
颜色@波长:Green最大正向电流:0.03 A
最大正向电压:4.4 V最高工作温度:100 °C
最低工作温度:-40 °C总高度:1.9 mm
峰值波长:523 nm最大反向电压:4 V
子类别:Visible LEDsBase Number Matches:1

TLEGE1100B 数据手册

 浏览型号TLEGE1100B的Datasheet PDF文件第2页浏览型号TLEGE1100B的Datasheet PDF文件第3页浏览型号TLEGE1100B的Datasheet PDF文件第4页浏览型号TLEGE1100B的Datasheet PDF文件第5页浏览型号TLEGE1100B的Datasheet PDF文件第6页浏览型号TLEGE1100B的Datasheet PDF文件第7页 
TL(BE,GTE,EGE)1100B(T11)  
TOSHIBA LED Lamps  
TLBE1100B(T11), TLGTE1100B(T11), TLEGE1100B(T11)  
Panel Circuit Indicator  
Unit: mm  
Surface-mount devices  
3.2 (L) × 2.8 (W) × 1.9 (H) mm  
Flat-top type  
InGaN LEDs  
High luminous intensity  
Low drive current, high-intensity light emission  
Colors:  
Blue  
Bluish Green λd=505nm(typ)  
Green λd=528nm(typ)  
λd=470nm(typ)  
Pb free reflow soldering is possible  
Applications: automotive use, message signboards, backlighting  
etc.  
Standard embossed tape packing: T11 (2000/reel)  
8-mm tape reel  
Color and Material  
Product Name  
Color  
Material  
InGaN  
JEDEC  
JEITA  
TLBE1100B  
TLGTE1100B  
TLEGE1100B  
Blue  
Bluish green  
Green  
TOSHIBA  
4-3R1  
Weight: 0.035 g (typ.)  
Absolute Maximum Ratings (Ta = 25°C)  
Forward Current  
Reverse Voltage  
Operation  
Temperature  
Storage  
Power Dissipation  
(mW)  
Temperature  
(°C)  
I
(mA)  
Product Name  
F
V
(V)  
P
D
R
T
opr  
(°C)  
T
stg  
Please see Note 1  
TLBE1100B  
TLGTE1100B  
TLEGE1100B  
129  
135  
132  
30  
4
40~100  
40~100  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Forward current derating  
TLBE1100B  
TLGTE1100B,TLEGE1100B  
I
Ta  
I – Ta  
F
F
40  
30  
20  
10  
0
40  
30  
20  
10  
0
0
20  
40  
60  
80  
100  
0
20  
40  
60  
80  
100  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
1
2007-10-01  

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