TLE2161BM

更新时间： 2024-11-24 11:07:51

品牌	Logo	应用领域
德州仪器 - TI		放大器运算放大器放大器电路
页数	文件大小	规格书
29页	478K
描述
军用级、单路、36V、6.4MHz、低失调电压 (0.3mV) 运算放大器

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TLE2161BM 数据手册

TLE2161, TLE2161A, TLE2161B

EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE

µPOWER OPERATIONAL AMPLIFIERS

SLOS049D – NOVEMBER 1989 – REVISED MAY 1996

Excellent Output Drive Capability

Wide Operating Supply Voltage Range

V = ± 2.5 V Min at R = 100 Ω,

= ± 3.5 V to ± 18 V

CC ±

= ± 5 V

CC±

High Open-Loop Gain . . . 280 V/mV Typ

= ± 12.5 V Min at R = 600 Ω,

Low Offset Voltage . . . 500 µV Max

= ± 15 V

CC±

Low Offset Voltage Drift With Time

Low Supply Current . . . 280 µA Typ

0.04 µV/Month Typ

Decompensated for High Slew Rate and

Gain-Bandwidth Product

Low Input Bias Current . . . 5 pA Typ

= 0.5 Min

Slew Rate = 10 V/µs Typ

Gain-Bandwidth Product = 6.5 MHz Typ

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE

LOAD RESISTANCE

description

The TLE2161, TLE2161A, and TLE2161B are

JFET-input, low-power, precision operational

amplifiers manufactured using the Texas

Instruments Excalibur process. Decompensated

for stability with a minimum closed-loop gain of 5,

these devices combine outstanding output drive

capability with low power consumption, excellent

dc precision, and high gain-bandwidth product.

= ± 5 V

= 25°C

In addition to maintaining the traditional JFET

advantages of fast slew rates and low input bias

and offset currents, the Excalibur process offers

outstanding parametric stability over time and

temperature. This results in a device that remains

precise even with changes in temperature and

over years of use.

100

1 k

10 k

– Load Resistance – Ω

AVAILABLE OPTIONS

PACKAGE

max

SMALL

OUTLINE

(D)

CHIP

CARRIER

(FK)

CERAMIC

DIP

PLASTIC

DIP

AT 25°C

(JG)

(P)

0°C

70°C

500 µV

1.5 mV

3 mV

—

TLE2161BCP

TLE2161ACP

TLE2161CP

TLE2161ACD

TLE2161CD

—

–40°C

85°C

500 µV

1.5 mV

3 mV

—

TLE2161BIP

TLE2161AIP

TLE2161IP

TLE2161AID

TLE2161ID

—

–55°C

125°C

500 µV

1.5 mV

3 mV

—

TLE2161BMJG

TLE2161AMJG

TLE2161MJG

TLE2161BMP

TLE2161AMP

TLE2161MP

TLE2161AMD

TLE2161MD

TLE2161AMFK

TLE2161MFK

The D packages are available taped and reeled. Add R suffix to device type (e.g., TLE2161ACDR).

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

12 3 4 5 6 7...29

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与TLE2161BM相关器件

型号	品牌	获取价格	描述	数据表
TLE2161BMJG	TI	获取价格	EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS
TLE2161BMJGB	TI	获取价格	JFET-Input Low Power High Drive Decompensated Single Operational Amplifier 8-CDIP -55 to 1
TLE2161BML	TI	获取价格	暂无描述
TLE2161BMLB	TI	获取价格	IC,OP-AMP,SINGLE,BIPOLAR/JFET,CAN,8PIN,METAL
TLE2161BMP	TI	获取价格	EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS
TLE2161CD	TI	获取价格	EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS
TLE2161CP	TI	获取价格	EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS
TLE2161ID	TI	获取价格	EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS
TLE2161IP	TI	获取价格	EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS
TLE2161M	TI	获取价格	军用级、单路、36V、6.4MHz、低失调电压 (0.6mV) 运算放大器

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