生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | PLASTIC, DIP-8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.73 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.04 µA |
最小共模抑制比: | 65 dB | 标称共模抑制比: | 65 dB |
频率补偿: | YES (AVCL>=5) | 最大输入失调电压: | 3600 µV |
JESD-30 代码: | R-PDIP-T8 | 长度: | 9.81 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 负供电电压上限: | -19 V |
标称负供电电压 (Vsup): | -15 V | 功能数量: | 1 |
端子数量: | 8 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
电源: | +-5/+-20 V | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 最小摆率: | 5 V/us |
标称压摆率: | 10 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 0.375 mA | 供电电压上限: | 19 V |
标称供电电压 (Vsup): | 15 V | 表面贴装: | NO |
技术: | BIPOLAR | 温度等级: | MILITARY |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 标称均一增益带宽: | 5600 kHz |
最小电压增益: | 7000 | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLE2161B | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2161BCJG | TI |
获取价格 |
IC,OP-AMP,SINGLE,BIPOLAR/JFET,DIP,8PIN,CERAMIC | |
TLE2161BCL | TI |
获取价格 |
IC,OP-AMP,SINGLE,BIPOLAR/JFET,CAN,8PIN,METAL | |
TLE2161BCP | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2161BIJG | TI |
获取价格 |
IC,OP-AMP,SINGLE,BIPOLAR/JFET,DIP,8PIN,CERAMIC | |
TLE2161BIL | TI |
获取价格 |
IC,OP-AMP,SINGLE,BIPOLAR/JFET,CAN,8PIN,METAL | |
TLE2161BIP | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2161BM | TI |
获取价格 |
军用级、单路、36V、6.4MHz、低失调电压 (0.3mV) 运算放大器 | |
TLE2161BMJG | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2161BMJGB | TI |
获取价格 |
JFET-Input Low Power High Drive Decompensated Single Operational Amplifier 8-CDIP -55 to 1 |