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TLE2142CDR PDF预览

TLE2142CDR

更新时间： 2024-11-26 05:03:55
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管
页数 文件大小 规格书
70页 1331K
描述
EXCALIBUR LOW-NOISE HIGH-SPEED PRECISION OPERATIONAL AMPLIFIERS

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TLE2142CDR 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Active零件包装代码：SOIC
包装说明：SOIC-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：6 weeks
风险等级：0.72Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：1.6 µA25C 时的最大偏置电流 (IIB)：2 µA
最小共模抑制比：85 dB标称共模抑制比：108 dB
频率补偿：YES最大输入失调电流 (IIO)：0.1 µA
最大输入失调电压：1200 µVJESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.9 mm
低-偏置：NO低-失调：NO
微功率：NO湿度敏感等级：1
负供电电压上限：-22 V标称负供电电压 (Vsup)：-15 V
功能数量：2端子数量：8
最高工作温度：70 °C最低工作温度：
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE包装方法：TR
峰值回流温度（摄氏度）：260功率：NO
电源：5/+-15 V可编程功率：NO
认证状态：Not Qualified座面最大高度：1.75 mm
最小摆率：27 V/us标称压摆率：45 V/us
子类别：Operational Amplifier最大压摆率：4.5 mA
供电电压上限：22 V标称供电电压 (Vsup)：15 V
表面贴装：YES技术：BIPOLAR
温度等级：COMMERCIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：6000 kHz最小电压增益：75000
宽带：NO宽度：3.9 mm
Base Number Matches：1

TLE2142CDR 数据手册

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SLOS183C − FEBRUARY 1997 − REVISED JUNE 2006  
D
Low Noise  
D
D
Single or Split Supply . . . 4 V to 44 V  
10 Hz . . . 15 nV/√Hz  
1 kHz . . . 10.5 nV/√Hz  
10000-pF Load Capability  
Fast Settling Time  
340 ns to 0.1%  
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400 ns to 0.01%  
20-mA Min Short-Circuit Output Current  
D
D
Saturation Recovery . . . 150 ns  
27-V/µs Min Slew Rate  
High Gain-Bandwidth Product . . . 5.9 MHz  
Large Output Swing  
V
+0.1 V to V  
− 1 V  
CC−  
CC+  
Low V  
. . . 500 µV Max at 25°C  
IO  
description  
The TLE214x and TLE214xA devices are high-performance, internally compensated operational amplifiers  
built using Texas Instruments complementary bipolar Excalibur process. The TLE214xA is a tighter offset  
voltage grade of the TLE214x. Both are pin-compatible upgrades to standard industry products.  
The design incorporates an input stage that simultaneously achieves low audio-band noise of 10.5 nV/√Hz with  
a 10-Hz 1/f corner and symmetrical 40-V/µs slew rate typically with loads up to 800 pF. The resulting low  
distortion and high power bandwidth are important in high-fidelity audio applications. A fast settling time of  
340 ns to 0.1% of a 10-V step with a 2-kΩ/100-pF load is useful in fast actuator/positioning drivers. Under similar  
test conditions, settling time to 0.01% is 400 ns.  
The devices are stable with capacitive loads up to 10 nF, although the 6-MHz bandwidth decreases to 1.8 MHz  
at this high loading level. As such, the TLE214x and TLE214xA are useful for low-droop sample-and-holds and  
direct buffering of long cables, including 4-mA to 20-mA current loops.  
The special design also exhibits an improved insensitivity to inherent integrated circuit component mismatches  
as is evidenced by a 500-µV maximum offset voltage and 1.7-µV/°C typical drift. Minimum common-mode  
rejection ratio and supply-voltage rejection ratio are 85 dB and 90 dB, respectively.  
Device performance is relatively independent of supply voltage over the 2-V to 22-V range. Inputs can  
operate between V  
− 0.3 to V  
− 1.8 V without inducing phase reversal, although excessive input current  
CC−  
CC+  
may flow out of each input exceeding the lower common-mode input range. The all-npn output stage provides  
a nearly rail-to-rail output swing of V − 0.1 to V − 1 V under light current-loading conditions. The device  
CC−  
CC+  
can sustain shorts to either supply since output current is internally limited, but care must be taken to ensure  
that maximum package power dissipation is not exceeded.  
Both versions can also be used as comparators. Differential inputs of V  
can be maintained without damage  
CC  
to the device. Open-loop propagation delay with TTL supply levels is typically 200 ns. This gives a good  
indication as to output stage saturation recovery when the device is driven beyond the limits of recommended  
output swing.  
Both the TLE214x and TLE214xA are available in a wide variety of packages, including both the  
industry-standard 8-pin small-outline version and chip form for high-density system applications. The C-suffix  
devices are characterized for operation from 0°C to 70°C, I-suffix devices from −40°C to 105°C, and M-suffix  
devices over the full military temperature range of −55°C to 125°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
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Copyright 1997 − 2006, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...70

中文翻译

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TLE2142CDR 替代型号

型号 品牌 替代类型 描述 数据表
TLE2142MD TI

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TLE2142CD TI

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TLE2142ID TI

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