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TLE2071QDRQ1

更新时间： 2024-11-10 12:15:51
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管输入元件
页数 文件大小 规格书
42页 692K
描述
EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS

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TLE2071QDRQ1 技术参数

是否无铅： 含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：SOIC
包装说明：PLASTIC, MS-012AA, SOIC-8针数：8
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.33.00.01风险等级：5.84
Is Samacsys：N放大器类型：OPERATIONAL AMPLIFIER
架构：VOLTAGE-FEEDBACK最大平均偏置电流 (IIB)：0.06 µA
25C 时的最大偏置电流 (IIB)：0.000175 µA标称共模抑制比：89 dB
频率补偿：YES最大输入失调电流 (IIO)：0.02 µA
最大输入失调电压：9000 µVJESD-30 代码：R-PDSO-G8
长度：4.9 mm低-偏置：YES
低-失调：NO负供电电压上限：-19 V
标称负供电电压 (Vsup)：-5 V功能数量：1
端子数量：8最高工作温度：125 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：SOP封装等效代码：SOP8,.25
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
包装方法：TAPE AND REEL峰值回流温度（摄氏度）：NOT SPECIFIED
电源：+-2.25/+-19/4.5/38 V认证状态：Not Qualified
筛选级别：AEC-Q100座面最大高度：1.75 mm
最小摆率：20 V/us标称压摆率：35 V/us
子类别：Operational Amplifier最大压摆率：2.2 mA
供电电压上限：19 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：BIFET
温度等级：AUTOMOTIVE端子形式：GULL WING
端子节距：1.27 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED标称均一增益带宽：9400 kHz
最小电压增益：7940宽度：3.9 mm
Base Number Matches：1

TLE2071QDRQ1 数据手册

 浏览型号TLE2071QDRQ1的Datasheet PDF文件第2页浏览型号TLE2071QDRQ1的Datasheet PDF文件第3页浏览型号TLE2071QDRQ1的Datasheet PDF文件第4页浏览型号TLE2071QDRQ1的Datasheet PDF文件第5页浏览型号TLE2071QDRQ1的Datasheet PDF文件第6页浏览型号TLE2071QDRQ1的Datasheet PDF文件第7页 
TLE207x-Q1, TLE207xA-Q1  
EXCALIBUR LOW-NOISE HIGH-SPEED  
JFET-INPUT OPERATIONAL AMPLIFIERS  
ꢀ  
SGLS226B − DECEMBER 2003 − REVISED MAY 2008  
D
D
D
Qualified for Automotive Applications  
D
D
D
Ensured Maximum Noise Floor  
17 nV/√Hz  
On-Chip Offset Voltage Trimming for  
Improved DC Performance  
Direct Upgrades to TL05x, TL07x, and  
TL08x BiFET Operational Amplifiers  
Greater Than 2× Bandwidth (10 MHz) and  
3× Slew Rate (45 V/µs) Than TL07x  
Wider Supply Rails Increase Dynamic  
Signal Range to 19 V  
description/ordering information  
The TLE207x series of JFET-input operational amplifiers more than double the bandwidth and triple the slew  
rate of the TL07x and TL08x families of BiFET operational amplifiers. Texas Instruments Excalibur process  
yields a typical noise floor of 11.6 nV/√Hz, 17-nV/√Hz ensured maximum, offering immediate improvement in  
noise-sensitive circuits designed using the TL07x. The TLE207x also has wider supply voltage rails, increasing  
the dynamic signal range for BiFET circuits to 19 V. On-chip zener trimming of offset voltage yields precision  
grades for greater accuracy in dc-coupled applications. The TLE207x are pin-compatible with lower  
performance BiFET operational amplifiers for ease in improving performance in existing designs.  
BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors, without  
sacrificing the output drive associated with bipolar amplifiers. This makes them better suited for interfacing with  
high-impedance sensors or very low-level ac signals. They also feature inherently better ac response than  
bipolar or CMOS devices having comparable power consumption.  
The TLE207x family of BiFET amplifiers are Texas Instruments highest performance BiFETs, with tighter input  
offset voltage and ensured maximum noise specifications. Designers requiring less stringent specifications but  
seeking the improved ac characteristics of the TLE207x should consider the TLE208x operational amplifier  
family.  
Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to  
observe common-mode input voltage limits and output swing when operating from a single supply. DC biasing  
of the input signal is required and loads should be terminated to a virtual ground node at mid-supply. Texas  
Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from single  
supplies.  
ORDERING INFORMATION†  
V
max  
ORDERABLE  
PART NUMBER  
TOP-SIDE  
MARKING  
IO  
‡
T
A
PACKAGE  
AT 25°C  
2 mV  
SOIC − D  
SOIC − D  
SOIC − D  
SOIC − D  
SOP − DW  
SOP − DW  
Tape and reel  
Tape and reel  
Tape and reel  
Tape and reel  
Tape and reel  
Tape and reel  
TLE2071AQDRQ1  
TLE2071QDRQ1  
TLE2072AQDRQ1  
TLE2072QDRQ1  
TLE2074AQDWRQ1  
2071AQ  
4 mV  
2071Q1  
3.5 mV  
6 mV  
2072AQ  
−40°C to 125°C  
2072Q1  
§
4 mV  
TLE2074AQ1  
TLE2074Q1  
§
7 mV  
TLE2074QDWRQ1  
†
For the most current package and ordering information, see the Package Option Addendum at the end of this  
document, or see the TI web site at http://www.ti.com.  
Package drawings, thermal data, and symbolization are available at http://www.ti.com/packaging.  
Product Preview  
‡
§
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
Copyright 2008, Texas Instruments Incorporated  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...42

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