生命周期: | Obsolete | 零件包装代码: | DFP |
包装说明: | DFP, FL14,.3 | 针数: | 14 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.59 |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB): | 0.03 µA | 标称共模抑制比: | 82 dB |
频率补偿: | YES | 最大输入失调电压: | 8000 µV |
JESD-30 代码: | R-GDFP-F14 | 长度: | 9.21 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 负供电电压上限: | -19 V |
标称负供电电压 (Vsup): | -5 V | 功能数量: | 4 |
端子数量: | 14 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, GLASS-SEALED |
封装代码: | DFP | 封装等效代码: | FL14,.3 |
封装形状: | RECTANGULAR | 封装形式: | FLATPACK |
电源: | +-3.5/+-20 V | 认证状态: | Not Qualified |
座面最大高度: | 2.03 mm | 最小摆率: | 1.8 V/us |
标称压摆率: | 3.4 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 1.5 mA | 供电电压上限: | 19 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | BIFET | 温度等级: | MILITARY |
端子形式: | FLAT | 端子节距: | 1.27 mm |
端子位置: | DUAL | 标称均一增益带宽: | 1300 kHz |
最小电压增益: | 250 | 宽度: | 6.285 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLE2064AMWB | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2064BCN | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2064BCN | ROCHESTER |
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QUAD OP-AMP, 4400uV OFFSET-MAX, 1.3MHz BAND WIDTH, PDIP14, PLASTIC, DIP-14 | |
TLE2064BIN | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2064BM | TI |
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军用级、四路、36V、2MHz、输入接近 V+、500μV 失调电压、JFET 输入运算放 | |
TLE2064BMFK | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE uPOWER OPERATIONAL AMPLIFIERS | |
TLE2064BMFKB | ROCHESTER |
获取价格 |
QUAD OP-AMP, 5500 uV OFFSET-MAX, 1.3 MHz BAND WIDTH, CQCC20, CERAMIC, LCC-20 | |
TLE2064BMFKB | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2064BMJ | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2064BMJB | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |