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TLE2062IDG4 PDF预览

TLE2062IDG4

更新时间： 2024-09-20 22:45:35
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路光电二极管输出元件输入元件驱动
页数 文件大小 规格书
75页 1499K
描述
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS

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TLE2062IDG4 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active零件包装代码：SOIC
包装说明：SOIC-8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8542.33.00.01Factory Lead Time：6 weeks
风险等级：1.48Is Samacsys：N
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB)：0.00006 µA25C 时的最大偏置电流 (IIB)：0.000003 µA
最小共模抑制比：72 dB标称共模抑制比：90 dB
频率补偿：YES最大输入失调电流 (IIO)：0.002 µA
最大输入失调电压：2000 µVJESD-30 代码：R-PDSO-G8
JESD-609代码：e4长度：4.9 mm
低-偏置：YES低-失调：NO
微功率：YES湿度敏感等级：1
负供电电压上限：-19 V标称负供电电压 (Vsup)：-5 V
功能数量：2端子数量：8
最高工作温度：85 °C最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装代码：SOP
封装等效代码：SOP8,.25封装形状：RECTANGULAR
封装形式：SMALL OUTLINE包装方法：TUBE
峰值回流温度（摄氏度）：260功率：NO
电源：+-3.5/+-18/7/36 V可编程功率：NO
认证状态：Not Qualified座面最大高度：1.75 mm
最小摆率：2.1 V/us标称压摆率：3.4 V/us
子类别：Operational Amplifier最大压摆率：0.69 mA
供电电压上限：19 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：BIFET
温度等级：INDUSTRIAL端子面层：Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式：GULL WING端子节距：1.27 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
标称均一增益带宽：2000 kHz最小电压增益：10000
宽带：NO宽度：3.91 mm
Base Number Matches：1

TLE2062IDG4 数据手册

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SLOS193B − FEBRUARY 1997 − REVISED MAY 2004  
D
2× Bandwidth (2 MHz) of the TL06x and  
TL03x Operational Amplifiers  
D
High Output Drive, Specified into 100-Ω  
Loads  
D
Low Supply Current . . . 290 µA/Ch Typ  
On-chip Offset Voltage Trimming for  
Improved DC Performance  
D
Lower Noise Floor Than Earlier  
Generations of Low-Power BiFETs  
D
description  
The TLE206x series of low-power JFET-input operational amplifiers doubles the bandwidth of the earlier  
generation TL06x and TL03x BiFET families without significantly increasing power consumption. Texas  
Instruments Excalibur process also delivers a lower noise floor than the TL06x and TL03x. On-chip zener  
trimming of offset voltage yields precision grades for dc-coupled applications. The TL206x devices are  
pin-compatible with other Texas Instruments BiFETs; they can be used to double the bandwidth of TL06x and  
TL03x circuits or to reduce power consumption of TL05x, TL07x, and TL08x circuits by nearly 90%.  
BiFET operational amplifiers offer the inherently-higher input impedance of the JFET-input transistors, without  
sacrificing the output drive associated with bipolar amplifiers. This makes them better suited for interfacing with  
high-impedance sensors or low-level ac signals. They also feature inherently better ac response than bipolar  
or CMOS devices having comparable power consumption. The TLE206x family features a high-output-drive  
circuit capable of driving 100-Ω loads at supplies as low as 5 V. This makes them uniquely suited for driving  
transformer loads in modems and other applications requiring good ac characteristics, low power, and high  
output drive.  
Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to  
observe common-mode input voltage limits and output swing when operating from a single supply. DC biasing  
of the input signal is required and loads should be terminated to a virtual ground node at mid-supply. Texas  
Instruments TLE2426 integrated virtual ground generator is useful when operating BiFET amplifiers from single  
supplies.  
The TLE206x are fully specified at 15 V and 5 V. For operation in low-voltage and/or single-supply systems,  
Texas Instruments LinCMOS families of operational amplifiers (TLC- and TLV-prefixes) are recommended.  
When moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate and bandwidth  
requirements and output loading. The Texas Instruments TLV2432 and TLV2442 CMOS operational amplifiers  
are excellent choices to consider.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
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Copyright 2004, Texas Instruments Incorporated  
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1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265  
1234567...75

中文翻译

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TLE2062IDG4 替代型号

型号 品牌 替代类型 描述 数据表
TLE2062CDR TI

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TLE2062ID TI

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 		双路、36V、2MHz 运算放大器
TLE2062MD TI

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TLE2062M-D TI

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 		采用 SOIC-8 封装的军用级、双路、36V、2MHz、输入接近 V+、JFET 输入运
TLE2062MDG4 TI

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 		EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE uPOWER OPERATIONAL AMPLIFIERS
TLE2062MDG4 ROCHESTER

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 		DUAL OP-AMP, 7000uV OFFSET-MAX, 1.3MHz BAND WIDTH, PDSO8, GREEN, PLASTIC, MS-012AA, SOIC-8
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