是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | SOIC-8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.33.00.01 |
Factory Lead Time: | 1 week | 风险等级: | 5.12 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.002 µA |
最小共模抑制比: | 70 dB | 标称共模抑制比: | 82 dB |
频率补偿: | YES | 最大输入失调电压: | 5900 µV |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e4 |
长度: | 4.9 mm | 低-偏置: | YES |
低-失调: | NO | 微功率: | YES |
湿度敏感等级: | 1 | 负供电电压上限: | -19 V |
标称负供电电压 (Vsup): | -5 V | 功能数量: | 2 |
端子数量: | 8 | 最高工作温度: | 70 °C |
最低工作温度: | 封装主体材料: | PLASTIC/EPOXY | |
封装代码: | SOP | 封装等效代码: | SOP8,.25 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
包装方法: | TUBE | 峰值回流温度(摄氏度): | 260 |
电源: | +-3.5/+-18/7/36 V | 认证状态: | Not Qualified |
座面最大高度: | 1.75 mm | 最小摆率: | 2.5 V/us |
标称压摆率: | 3.4 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 0.715 mA | 供电电压上限: | 19 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | BIFET | 温度等级: | COMMERCIAL |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 标称均一增益带宽: | 1300 kHz |
最小电压增益: | 10000 | 宽度: | 3.9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
TLE2062CDR | TI |
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TLE2062CD | TI |
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TLE2062ACDG4 | TI |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLE2062CDR | TI |
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TLE2062CDRG4 | TI |
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TLE2062CP | TI |
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TLE2062CPE4 | TI |
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TLE2062CPSR | TI |
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TLE2062CPSR | ROCHESTER |
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DUAL OP-AMP, 5900 uV OFFSET-MAX, 1.3 MHz BAND WIDTH, PDSO8, PLASTIC, SOP-8 | |
TLE2062ID | TI |
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TLE2062IDG4 | TI |
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TLE2062IDR | TI |
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TLE2062IDRG4 | TI |
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