是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | SOIC | 包装说明: | PLASTIC, MS-012AA, SOIC-8 |
针数: | 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.33.00.01 |
风险等级: | 5.69 | Is Samacsys: | N |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB): | 0.004 µA | 最小共模抑制比: | 65 dB |
标称共模抑制比: | 82 dB | 频率补偿: | YES |
最大输入失调电压: | 4300 µV | JESD-30 代码: | R-PDSO-G8 |
长度: | 4.9 mm | 低-偏置: | YES |
低-失调: | NO | 微功率: | YES |
负供电电压上限: | -19 V | 标称负供电电压 (Vsup): | -5 V |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | +-5/+-15 V | 认证状态: | Not Qualified |
座面最大高度: | 1.75 mm | 最小摆率: | 2.1 V/us |
标称压摆率: | 3.4 V/us | 子类别: | Operational Amplifier |
供电电压上限: | 19 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | YES | 技术: | BIFET |
温度等级: | INDUSTRIAL | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 标称均一增益带宽: | 1300 kHz |
最小电压增益: | 10000 | 宽度: | 3.9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLE2062BIDR | TI |
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TLE2062BIP | ROCHESTER |
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DUAL OP-AMP, 4300uV OFFSET-MAX, 1.3MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8 | |
TLE2062BIP | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BMD | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BMDR | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BMFK | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BMFKB | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BMJG | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BMJGB | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BMP | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |