是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | DIP, DIP8,.3 | 针数: | 8 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.25 |
放大器类型: | OPERATIONAL AMPLIFIER | 架构: | VOLTAGE-FEEDBACK |
最大平均偏置电流 (IIB): | 0.03 µA | 最小共模抑制比: | 65 dB |
标称共模抑制比: | 82 dB | 频率补偿: | YES |
最大输入失调电压: | 6000 µV | JESD-30 代码: | R-PDIP-T8 |
长度: | 9.81 mm | 低-偏置: | YES |
低-失调: | NO | 微功率: | YES |
负供电电压上限: | -19 V | 标称负供电电压 (Vsup): | -5 V |
功能数量: | 2 | 端子数量: | 8 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | DIP |
封装等效代码: | DIP8,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | +-5/+-15 V | 认证状态: | Not Qualified |
座面最大高度: | 5.08 mm | 最小摆率: | 1.8 V/us |
标称压摆率: | 3.4 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 0.73 mA | 供电电压上限: | 19 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | BIFET | 温度等级: | MILITARY |
端子形式: | THROUGH-HOLE | 端子节距: | 2.54 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
标称均一增益带宽: | 1300 kHz | 最小电压增益: | 7000 |
宽度: | 7.62 mm |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLE2062AMU | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE uPOWER OPERATIONAL AMPLIFIERS | |
TLE2062AMUB | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BCD | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BCD | ROCHESTER |
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DUAL OP-AMP, 3900uV OFFSET-MAX, 1.3MHz BAND WIDTH, PDSO8, PLASTIC, MS-012AA, SOIC-8 | |
TLE2062BCDR | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BCP | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BID | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BIDR | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BIP | ROCHESTER |
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DUAL OP-AMP, 4300uV OFFSET-MAX, 1.3MHz BAND WIDTH, PDIP8, PLASTIC, DIP-8 | |
TLE2062BIP | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |