生命周期: | Obsolete | 零件包装代码: | QLCC |
包装说明: | CERAMIC, LCC-20 | 针数: | 20 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | 风险等级: | 5.62 |
Is Samacsys: | N | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.03 µA |
最小共模抑制比: | 65 dB | 标称共模抑制比: | 82 dB |
频率补偿: | YES | 最大输入失调电压: | 6000 µV |
JESD-30 代码: | S-CQCC-N20 | 长度: | 8.89 mm |
低-偏置: | YES | 低-失调: | NO |
微功率: | YES | 负供电电压上限: | -19 V |
标称负供电电压 (Vsup): | -5 V | 功能数量: | 2 |
端子数量: | 20 | 最高工作温度: | 125 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装代码: | QCCN | 封装等效代码: | LCC20,.35SQ |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER |
电源: | +-5/+-15 V | 认证状态: | Not Qualified |
座面最大高度: | 2.03 mm | 最小摆率: | 1.8 V/us |
标称压摆率: | 3.4 V/us | 子类别: | Operational Amplifier |
最大压摆率: | 0.73 mA | 供电电压上限: | 19 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | BIFET | 温度等级: | MILITARY |
端子形式: | NO LEAD | 端子节距: | 1.27 mm |
端子位置: | QUAD | 标称均一增益带宽: | 1300 kHz |
最小电压增益: | 7000 | 宽度: | 8.89 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLE2062AMFKB | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062AMJG | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062AMJG | ROCHESTER |
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DUAL OP-AMP, 6000uV OFFSET-MAX, 1.3MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 | |
TLE2062AMJGB | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062AMP | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062AMU | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE uPOWER OPERATIONAL AMPLIFIERS | |
TLE2062AMUB | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BCD | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2062BCD | ROCHESTER |
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DUAL OP-AMP, 3900uV OFFSET-MAX, 1.3MHz BAND WIDTH, PDSO8, PLASTIC, MS-012AA, SOIC-8 | |
TLE2062BCDR | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |