是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | DIP |
包装说明: | PLASTIC, DIP-8 | 针数: | 8 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.33.00.01 | Factory Lead Time: | 1 week |
风险等级: | 5.86 | 放大器类型: | OPERATIONAL AMPLIFIER |
架构: | VOLTAGE-FEEDBACK | 最大平均偏置电流 (IIB): | 0.004 µA |
标称共模抑制比: | 82 dB | 频率补偿: | YES |
最大输入失调电压: | 2700 µV | JESD-30 代码: | R-PDIP-T8 |
长度: | 9.81 mm | 低-偏置: | YES |
低-失调: | NO | 负供电电压上限: | -19 V |
标称负供电电压 (Vsup): | -5 V | 功能数量: | 1 |
端子数量: | 8 | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | DIP | 封装等效代码: | DIP8,.3 |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | +-5/+-20 V |
认证状态: | Not Qualified | 座面最大高度: | 5.08 mm |
最小摆率: | 2.1 V/us | 标称压摆率: | 3.4 V/us |
子类别: | Operational Amplifier | 最大压摆率: | 0.35 mA |
供电电压上限: | 19 V | 标称供电电压 (Vsup): | 5 V |
表面贴装: | NO | 技术: | BIFET |
温度等级: | INDUSTRIAL | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 标称均一增益带宽: | 1300 kHz |
最小电压增益: | 500 | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TLE2061BMJG | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2061BMJGB | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2061BMJGB | ROCHESTER |
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OP-AMP, 3100uV OFFSET-MAX, 1.3MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 | |
TLE2061CD | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2061CD | ROCHESTER |
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OP-AMP, 4000 uV OFFSET-MAX, 1.3 MHz BAND WIDTH, PDSO8, GREEN, PLASTIC, MS-012AA, SOIC-8 | |
TLE2061CDBLE | TI |
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暂无描述 | |
TLE2061CDG4 | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2061CDR | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2061CDRG4 | TI |
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EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS | |
TLE2061CP | TI |
获取价格 |
EXCALIBUR JFET-INPUT HIGH-OUTPUT-DRIVE mPOWER OPERATIONAL AMPLIFIERS |