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TLE2024A-EP PDF预览

TLE2024A-EP

更新时间: 2024-11-20 11:06:39
品牌 Logo 应用领域
德州仪器 - TI 放大器运算放大器放大器电路
页数 文件大小 规格书
42页 889K
描述
增强型产品 Excalibur 高速、低功耗、精密运算放大器

TLE2024A-EP 数据手册

 浏览型号TLE2024A-EP的Datasheet PDF文件第2页浏览型号TLE2024A-EP的Datasheet PDF文件第3页浏览型号TLE2024A-EP的Datasheet PDF文件第4页浏览型号TLE2024A-EP的Datasheet PDF文件第5页浏览型号TLE2024A-EP的Datasheet PDF文件第6页浏览型号TLE2024A-EP的Datasheet PDF文件第7页 
ꢀ ꢁꢂ ꢃ ꢄ ꢃ ꢅ ꢆꢂ  ꢃꢄ ꢃꢅ ꢉꢆ ꢂ ꢇ  
ꢂꢊ ꢋꢉꢁ ꢌꢍꢎ ꢏ ꢐꢌ ꢑꢐ ꢆꢒꢇꢂ ꢂꢓ ꢁ ꢔꢕꢆꢇꢔ ꢕ ꢂꢏ ꢇꢏ ꢂꢋ ꢌ ꢒꢌ ꢔ ꢖ  
ꢔ ꢇꢂꢏ ꢉꢀ ꢌꢔ ꢖꢉꢁ ꢉꢗ ꢇ ꢁꢌ ꢘꢌ ꢂꢏ ꢒ  
SGLS235B− FEBRUARY 2004 − REVISED JUNE 2007  
D
Controlled Baseline  
− One Assembly/Test Site, One Fabrication  
Site  
D
D
D
D
High Unity-Gain Bandwidth . . . 2 MHz Typ  
High Slew Rate . . . 0.45 V/µs Min  
Supply-Current Change Over Full Temp  
D
D
Extended Temperature Performance of  
−40°C to 125°C  
Enhanced Diminishing Manufacturing  
Sources (DMS) Support  
Range . . . 10 µA Typ at V  
=
15 V  
CC  
Specified for Both 5-V Single-Supply and  
15-V Operation  
D
Phase-Reversal Protection  
D
D
D
Enhanced Product-Change Notification  
D
High Open-Loop Gain . . . 6.5 V/µV  
(136 dB) Typ  
Qualification Pedigree  
Supply Current . . . 300 µA Max  
D
D
Low Offset Voltage . . . 100 µV Max  
Offset Voltage Drift With Time  
0.005 µV/mo Typ  
Low Input Bias Current . . . 50 nA Max  
Component qualification in accordance with JEDEC and industry  
standards to ensure reliable operation over an extended  
temperature range. This includes, but is not limited to, Highly  
Accelerated Stress Test (HAST) or biased 85/85, temperature  
cycle, autoclave or unbiased HAST, electromigration, bond  
intermetallic life, and mold compound life. Such qualification  
testing should not be viewed as justifying use of this component  
beyond specified performance and environmental limits.  
D
D
Low Noise Voltage . . . 19 nV/Hz Typ  
description  
The TLE202x and TLE202xA devices are precision, high-speed, low-power operational amplifiers using a new  
Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly  
improved slew rate and unity-gain bandwidth.  
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic  
improvement in unity-gain bandwidth and slew rate over similar devices.  
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both  
time and temperature. This means that a precision device remains a precision device even with changes in  
temperature and over years of use.  
This combination of excellent dc performance with a common-mode input voltage range that includes the  
negative rail makes these devices the ideal choice for low-level signal conditioning applications in either  
single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry  
that eliminates an unexpected change in output states when one of the inputs goes below the negative supply  
rail.  
A variety of options are available in small-outline packaging for high-density systems applications.  
The Q-suffix devices are characterized for operation over the full automotive temperature range of −40°C to  
125°C.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
ꢀꢥ  
Copyright 2007 Texas Instruments Incorporated  
ꢡ ꢥ ꢢ ꢡꢚ ꢛꢮ ꢝꢜ ꢠ ꢨꢨ ꢦꢠ ꢞ ꢠ ꢟ ꢥ ꢡ ꢥ ꢞ ꢢ ꢪ  
1
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  

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